Abstract
Since their invention, advents in structural evolution of semiconducting metal oxide-based chemical sensors relied much on the controllable surface to volume ratio of different nanoforms as the governing factor for sensing performance. Among the established synthesis techniques, electrochemical anodization has been found to be the promising one to develop the porous sensing layer with precise controllability and repeatability. The method is used either to create controlled porosity on an existing oxide surface or to grow porous oxide from corresponding metal. Recently, the technique has been successfully extended for development of sophisticated oxide structures like nanotubes, nanowires, and nanodots. The scope of the present overview concerns electrochemical anodization process, encompassing the effect of texture influencing factors, followed by the sensing performance of such films/nanoforms. Potentiality of different device structures (like resistive, Schottky, Metal–Insulator–Metal (MIM) and Metal–Insulator Semiconductor (MIS)) employing such electrochemically grown layer of oxide nanoforms, as the sensing element, have been elaborately explored. The sensor characteristics like response magnitude, response time and recovery time for the oxidizing and reducing chemical species have been critically discussed with particular emphasis on respective advantages and bottlenecks of the device structures. Finally, the chapter summarizes the salient features, prospects, and challenges of the electrochemically grown nanostructures for possible integration with MEMS technology.
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Bhattacharyya, P., Dutta, K., Chattopadhyay, P.P. (2017). Electrochemically Derived Oxide Nanoform-Based Gas Sensor Devices: Challenges and Prospects with MEMS Integration. In: Zhang, D., Wei, B. (eds) Advanced Mechatronics and MEMS Devices II. Microsystems and Nanosystems. Springer, Cham. https://doi.org/10.1007/978-3-319-32180-6_14
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