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Tunneling Field Effect Transistor Technology pp 61–87Cite as

Compact Models of TFETs

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Abstract

Rapid developments in the TFETs’ process and rising interests in evaluating their potential in low-power circuits/systems require a TFET compact model for SPICE simulations. In this chapter, we discuss the essential device physics of TFETs, propose necessary simplifications of their complex operations, and develop a core model for homojunction TFETs. At first, we analyze the roles of TFET channel charge in affecting their subthreshold swing and superlinear output. Bearing this in mind, we divide the TFET structure into three distinctive regions for the purposes of considering the channel charge and at the same time getting a closed-form solution of the device electrostatics. After that, we find a simplification to the integration formulation of the interband tunneling physics to derive the current model. With a straightforward derivation, we obtain the terminal charge model and therefore finish the core model development. Around this core, we are adding advanced effect modules and specifically introduce the gate leakage module and short-channel effect module here. Finally, we analyze the basic operations of heterojunction TFETs and possible challenges in their model developments.

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Acknowledgement

This work was supported by the General Research Fund from the Research Grant Council of Hong Kong under project number 611012. We would also like to thank Prof. Zhiping Yu and Mr. Peng Wu of Tsinghua University for the discussions on short-channel effects in TFETs.

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  1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

    Lining Zhang & Mansun Chan

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  1. Lining Zhang
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Correspondence to Lining Zhang .

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Editors and Affiliations

  1. and Technology, Hong Kong University of Science, Hong Kong, China

    Lining Zhang

  2. and Technology, Hong Kong University of Science, Hong Kong, China

    Mansun Chan

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Zhang, L., Chan, M. (2016). Compact Models of TFETs. In: Zhang, L., Chan, M. (eds) Tunneling Field Effect Transistor Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-31653-6_3

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  • DOI: https://doi.org/10.1007/978-3-319-31653-6_3

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