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Tunneling FET Fabrication and Characterization

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Tunneling Field Effect Transistor Technology

Abstract

Since the early demonstration of the conventional p + −i − n + Tunneling FETs (TFETs), various tunneling junction designs as well as the introduction of new material systems enabled the performance of TFETs to improve by orders of magnitude. Different properties and considerations of the material systems require well designed processes and novel processes rarely seen in the CMOS technology also emerged. The technology of TFET fabrication has been evolving dramatically ever since. This chapter introduces a number of techniques in the previous studies on the fabrication technology for the TFETs. In addition, some characterization methods on the fabricated devices are also discussed for more efficient diagnosis and optimization on the TFETs.

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Acknowledgments

Part of the work presented in this chapter was supported by the Center for Energy Efficient Electronics Science (NSF Award 0939514).

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Authors and Affiliations

  1. Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA, 02139, USA

    Tao Yu, Judy L. Hoyt & Dimitri A. Antoniadis

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  1. Tao Yu
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  2. Judy L. Hoyt
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Correspondence to Tao Yu .

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Editors and Affiliations

  1. and Technology, Hong Kong University of Science, Hong Kong, China

    Lining Zhang

  2. and Technology, Hong Kong University of Science, Hong Kong, China

    Mansun Chan

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Yu, T., Hoyt, J.L., Antoniadis, D.A. (2016). Tunneling FET Fabrication and Characterization. In: Zhang, L., Chan, M. (eds) Tunneling Field Effect Transistor Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-31653-6_2

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  • DOI: https://doi.org/10.1007/978-3-319-31653-6_2

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