Abstract
In the area of fault attacks, lasers are a common method to inject faults into an integrated circuit. Against the background of decreasing structure sizes in ICs, it is of interest which fault model can be met with state of the art equipment. We investigate laser-based fault injections into the SRAM-cells of block RAMs of two different FPGAs with 90 nm and 45 nm feature size respectively. Our results show that individual bit manipulations are feasible for both, the 90 nm chip and the 45 nm chip, but with limitations for the latter. To the best of our knowledge, we are the first to investigate laser fault injections into 45 nm technology nodes. We provide detailed insights of our laser equipment and the parameters of our setup to give a comparison base for further research.
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Selmke, B., Brummer, S., Heyszl, J., Sigl, G. (2016). Precise Laser Fault Injections into 90 nm and 45 nm SRAM-cells. In: Homma, N., Medwed, M. (eds) Smart Card Research and Advanced Applications. CARDIS 2015. Lecture Notes in Computer Science(), vol 9514. Springer, Cham. https://doi.org/10.1007/978-3-319-31271-2_12
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DOI: https://doi.org/10.1007/978-3-319-31271-2_12
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