Abstract
An on-chip power and ground distribution network is commonly modeled as a resistive mesh structure with different vertical and horizontal unit resistances, as shown in Fig. 22.1a [396, 442, 455, 456], where the thickness and width of the metal lines are typically different in orthogonal metal layers. Power and ground networks are illustrated in Fig. 22.1a with, respectively, dark and light gray lines. A mesh structured power network and the corresponding resistive circuit model are illustrated, respectively, in Fig. 22.1b, c. Since the power and ground distribution networks exhibit similar characteristics, only the power network is considered in this chapter. This approach can also be used to determine the effective resistance in any two layer mesh structure with different horizontal and vertical unit resistances.
Two layer orthogonal metal lines connected with vias; (a) two layer power and ground distribution network where the power and ground lines are illustrated, respectively, with dark and light gray, (b) a two layer power distribution network only, and (c) a resistive mesh model of the power distribution network
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P.-Vaisband, I., Jakushokas, R., Popovich, M., Mezhiba, A.V., Köse, S., Friedman, E.G. (2016). Effective Resistance in a Two Layer Mesh. In: On-Chip Power Delivery and Management. Springer, Cham. https://doi.org/10.1007/978-3-319-29395-0_22
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DOI: https://doi.org/10.1007/978-3-319-29395-0_22
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