Abstract
Gate all around silicon nanowire transistors have shown significant improvement at reduced gate lengths where conventional MOSFETs are terribly affected due to short channel effects and other issues. In this paper we analyze the stress and strain caused due to heat transfer in gate all around Silicon nanowire transistor . Important parameters like Von Mises stress , First Piola Kirchoff , Second Piola Kirchoff and Deviatoric stress tensor (Gauss point evaluation) have been analyzed using Multiphysics simulation software.
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References
N. Clément, X.L. Han, G. Larrieu, Appl. Phys. Lett. 103, 263504 (2013). doi:10.1063/1.4858955
J. Chen, T. Saraya, K. Miyaji, K. Shimizu, T. Hiramoto, Jpn. J. Appl. Phys. 48, 1R (2009)
D.M. Kim, B. Kim, R.-H. Baek, Nanowire Field Effect Transistors: Principles and Applications (Springer, Berlin, 2013), pp. 63–87
S. Sasaki, K. Tateno, G. Zhang, H. Pigot, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa, K. Muraki, Jpn. J. Appl. Phys. 54, 4S (2015)
D.M. Kim, B. Kim, R.-H. Baek, Silicon nanowire field-effect transistor. Nanowire Field Effect Transistors: Principles and Applications (Springer, New York, 2014), pp. 63–87
M. Ohmori, P. Vitushinskiy, T. Kojima, H. Sakaki, Appl. Phys. Express. 6(4), 045003 (2013)
Y. Cui et al., High performance silicon nanowire field effect transistors. Nano Lett. 3.2, 149–152 (2003)
V. Schmidt et al., Realization of a silicon nanowire vertical surround‐gate field‐effect transistor. Small 2.1, 85–88 (2006)
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Chatterjee, N., Pandey, S. (2017). Multiphysics Analysis of Heat Transfer in Gate All Around (GAA) Silicon Nanowire Transistor: Material Perspective. In: Jain, V., Rattan, S., Verma, A. (eds) Recent Trends in Materials and Devices. Springer Proceedings in Physics, vol 178. Springer, Cham. https://doi.org/10.1007/978-3-319-29096-6_6
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DOI: https://doi.org/10.1007/978-3-319-29096-6_6
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Online ISBN: 978-3-319-29096-6
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