Abstract
Optimized silicon nitride (SiN) film, which acts as an Anti-Reflection Coating (ARC) , surface and bulk passivating layer is the key to enhance the efficiency in silicon solar cells particularly in multicrystalline silicon solar cells. In this work, SiN films with graded and non-graded profiles with different refractive indices have been prepared. The efficiency of a multi-crystalline silicon solar cell has been measured and followed by a module making process to evaluate the cell-to-module conversion power loss (CTMPL) . It has been found that an optimized graded SiN film can reduce the surface reflection in ultraviolet (UV) and visible wavelength region significantly and hence enhances the efficiency compared to single step (non-graded) recipe. To develop more insight of the experimental work, simulation was carried out using PC1D solar cell simulator and it has been observed that refractive index (n) of 2.04 is the optimum value of refractive index in single step recipe as it enhances efficiency on cell level measurement among all different single step SiN recipes. Whereas, refractive index of 2.14 is the optimum value of refractive index in graded step recipe as it produces much higher efficiency on cell level measurement among all SiN recipes and even better than single step recipe. In this research work, it has been found that graded step refractive index recipe has reduced the reflectance of SiN films, enhanced spectral response and efficiency of the solar cells and higher refractive index of SiN film corresponds to reduced CTMPL values of the modules.
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L.L. Ma, Y.C. Zhou, N. Jiang et al., Wide-band black silicon based on porous silicon. Appl. Phys. Lett. 88, 171907 (2006)
M. Lipinski, P. Panek, S. Kluska, P. Zieba, A. Szyszka, B. Paszkewicz, Defect passivation of multicrystalline silicon solar cells by silicon nitride coatings. Mater. Sci. 24(4), 1009–1016 (2006)
M. Lipnski, P. Zieba, S. Joans, S. Kluska, M. Sokolowski, H. Czternastik, Optimization of SiNx:H layer for multicrystalline silicon solarcells. Optoelectron. Rev. 12, 41–44 (2004)
L.C. Chung, T.C. Jen, TiO2-Ta2O5 composite thin films deposited by radio frequency ion beam sputtering. Appl. Opt. 45, 36 (2006)
K. Stefan, Solar Electric Power Generation (Springer, Berlin, 1996), pp. 144–145
H. Mackel, R. Ludemann, Detailed study of the composition of hydrogenated SiNx layer of high quality silicon surface passivation. J. Appl. Phys. 92, 5 (2002)
M.H. Kang, K. Ryu, A. Upadhyaya, Ajeet Rohatgi, Optimization of SiN AR coating for si solar cells and modules through quantitative assessment of optical and efficiency loss mechanism. Prog. Photovolt: Res. Appl. 19, 983–990 (2011)
P. Wurfel, Physics of Solar Cells (Wiley-VCH Verlag GmbH & KGaA, Weinheim, 2005)
M. Green, High Efficiency Silicon Solar Cells. Hardback, Transactions on Technical Publications Ltd (1987)
H.F.W. Dekkers, S. De Wolf, G. Agostinelli, F. Duerinckx, G. Beaucarne, Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si. Sol. Energy Mater. Sol. Cells 90, 3244–3250 (2006)
I.G. Romijn, W.J. Soppe, H.C. Rieffe, A.R. Burgers, A.W. Weeber, in Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 2005, pp. 1352–1355
I.G. Romijn, H.C. Rieffe, A.W. Weeber, W.J. Soppe, Passivating Mc-Si solar cells using SiNx:H: how to tune to maximum efficiencies, in Proceedings of the 15th International Photovoltaic Science and Engineering Conference (PVSEC-15), Shanghai, China, 2005, pp. 303–304
M. Blech, A. Laades, C. Ronning, B. Schroter, C. Borschel, D. Rzesanke, A. Lawerenz, Detailed study of PECVD silicon nitride and correlation of various characterization techniques, in Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 2009, pp. 507–511
A.W. Weber, H.C. Rieffe, W.C. Sinke, W.J. Soppe, Structural and passivating properties of SiNx:H deposited using different precursor gases, in Proceedings of the 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 2004, pp. 1005–1008
A.W. Weeber, H.C. Rieffe, I.G. Romijn, W.C. Sinke, W.J. Soppe, The fundamental properties of SiNx:H determine its passivating qualities, in Proceedings 31th IEEE Photovoltaic Specialists Conference, Florida, USA, 2005, pp. 1043–1046
A.J.M. van Ervan, R.C.M. Bosch, A.W. Weeber, M.D. Bijker, Effects of different firing profiles on layer characteristics and passivation. Properties of industrial ETP deposited silicon nitride films, in Proceedings of the 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 2004, pp. 927–930
J.D. Moschner, J. Henze, J. Schmidt, R. Hezel, High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system. Prog. Photovoltaics Res. Appl. 12, 21–31 (2004)
Acknowledgements
The author would like to thank Mr. H.R. Gupta, MD Indosolar Ltd. for giving opportunity to work on this project. We would also like to thank Dr. Vamsi, CES IITD, for allowing their lab facility. Authors also wish to acknowledge Dr. Ashok K. Chauhan, Founder President, Amity University, Noida for his continuous encouragement and kind support. We are thankful to DST, GOI, for their support.
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Sharma, V., Verma, A., Verma, D., Jain, V.K., Singh, D.N. (2017). Growth of Graded SixNy ARC Films to Enhance the Efficiency of Multi-crystalline Silicon Solar Cells and Applicable in High Volume Production. In: Jain, V., Rattan, S., Verma, A. (eds) Recent Trends in Materials and Devices. Springer Proceedings in Physics, vol 178. Springer, Cham. https://doi.org/10.1007/978-3-319-29096-6_38
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DOI: https://doi.org/10.1007/978-3-319-29096-6_38
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