Abstract
Graphene , the wonder material, is a one atom thick two dimensional crystal lattice having a honeycomb like structure. Its peculiar electrical, mechanical and optical properties have attracted the attention of the researchers like never before. Graphene film with two dimensional structure were successfully prepared via a physical method on Ni coated Si wafer using low pressure chemical vapor (LPCVD) method at temperature as low as 650 °C. For this growth acetylene was used as source gas and the hydrogen as the carrier gas in ratio of 1:20. The as-grown graphene was characterized using Scanning Electron Microscopy, Fourier transformation infra-red (FTIR) and Raman Spectroscopy. The SEM, FTIR and Raman spectroscopy confirmed the successful growth of multilayer graphene.
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Acknowledgments
One of the authors (Sunny Khan) is thankful to UGC for providing financial assistance in the form of SRF under Maulana Azad National Fellowship for Minority Students.
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Khan, S., Ali, J., Harsh, Husain, M., Zulfequar, M. (2017). Synthesis of Graphene by Low Pressure Chemical Vapor Deposition (LPCVD) Method. In: Jain, V., Rattan, S., Verma, A. (eds) Recent Trends in Materials and Devices. Springer Proceedings in Physics, vol 178. Springer, Cham. https://doi.org/10.1007/978-3-319-29096-6_15
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DOI: https://doi.org/10.1007/978-3-319-29096-6_15
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