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Ultrathin Oxide Films on Au(111) Substrates

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Oxide Materials at the Two-Dimensional Limit

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 234))

Abstract

The Au(111) surface is an excellent substrate for the growth of ultrathin oxide films. Although it is chemically relatively inert, the high electronegativity of Au tends to give rise to strong interactions between the oxide film and the substrate via charge transfer processes. Many new surface oxide structures with unique properties have been observed in ultrathin film form that have no analogues as bulk crystal terminations.

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Abbreviations

2D:

Two-dimensional

3D:

Three-dimensional

AES:

Auger electron spectroscopy

CVD:

Chemical vapor deposition

FCC:

Face centered cubic

HCP:

Hexagonal close packing

LEED:

Low-energy electron diffraction

MBE:

Molecular beam epitaxy

ML:

Monolayer

PVD:

Physical vapor deposition

RHEED:

Reflection high energy electron diffraction

RLAD:

Reactive-layer-assisted deposition

RT:

Room temperature

SMSI:

Strong metal-support interactions

STM:

Scanning tunneling microscopy

STS:

Scanning tunneling spectroscopy

TMAA:

Trimethyl acetic acid

TPD:

Thermal programmed desorption

UHV:

Ultrahigh vacuum

XPS:

X-ray photoelectron spectroscopy

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Authors and Affiliations

  1. School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, China

    Chen Wu

  2. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

    Martin R. Castell

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  1. Chen Wu
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  2. Martin R. Castell
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Correspondence to Chen Wu or Martin R. Castell .

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Editors and Affiliations

  1. Institute of Physics, Karl-Franzens University, Graz, Austria

    Falko P. Netzer

  2. ICCOM, National Research Council, Pisa, Italy

    Alessandro Fortunelli

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Wu, C., Castell, M.R. (2016). Ultrathin Oxide Films on Au(111) Substrates. In: Netzer, F., Fortunelli, A. (eds) Oxide Materials at the Two-Dimensional Limit. Springer Series in Materials Science, vol 234. Springer, Cham. https://doi.org/10.1007/978-3-319-28332-6_5

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