Advertisement

Integrated Photodiodes in Nanometer CMOS Technologies

  • Mohamed AtefEmail author
  • Horst Zimmermann
Chapter
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 55)

Abstract

This chapter contains aspects like technology selection and scaling of photodiode performance. Classical PN junction, double-junction photodiodes, finger photodiodes, PIN photodiodes, a spatially modulated light detector, a triple-junction photodetector and avalanches photodiodes in nanometer CMOS are described. A comparison completes this chapter.

Keywords

Bias Voltage Depletion Region Spatially Modulate Light Optical Receiver High Responsivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    H. Zimmermann, Integrated Silicon Optoelectronics, 2nd edn. (Springer, Berlin, 2010)CrossRefGoogle Scholar
  2. 2.
    C. Hermans, M. Steyaert, Broadband Opto-Electrical Receivers in Standard CMOS (Springer, Netherlands, 2007)Google Scholar
  3. 3.
    M. Atef, A. Polzer, H. Zimmermann, High-speed photodiodes in 40 nm standard CMOS technology. Sens. Actuators A Phys. (2013)Google Scholar
  4. 4.
    M. Atef, A. Polzer, H. Zimmermann, Avalanche double photodiode in 40nm standard CMOS technology. J. Quantum Electron. (Submitted) (2013)Google Scholar
  5. 5.
    M.-J. Lee, W.-Y. Choi, A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product. Opt. Express 18(23), 24189–24194 (2010)ADSCrossRefGoogle Scholar
  6. 6.
    ETSI TS 105 175-1 V1.1.1(2010-01), Access, Terminals, Transmission and Multiplexing (ATTM); Plastic Optical Fibre System Specifications for 100 Mbit/s and 1 Gbit/s (2010). http://www.etsi.org/WebSite/homepage.aspx
  7. 7.
    M. Atef, R. Swoboda, H. Zimmermann, 1.25 Gbit/s over 50 m step-index plastic optical fiber using a fully integrated optical receiver with an integrated equalizer. J. Lightwave Technol. 30(1), 118–122 (2012)ADSCrossRefGoogle Scholar
  8. 8.
    M. Atef, H. Zimmermann, Optical receiver using noise cancelling with an integrated photodiode in 40 nm cmos technology. IEEE Trans. Circuits Syst. I (TCAS I) (2013)Google Scholar
  9. 9.
    H. Zimmermann, K. Kieschnick, T. Heide, A. Ghazi, Integrated high-speed, high-responsivity Photodiode in CMOS and BiCMOS technology, in Proceeding of the 29th. European Solid-State Device Research Conference, (1999), pp. 332–335Google Scholar
  10. 10.
    A, Rochas, A.R. Pauchard, P.-A. Besse, D. Pantic, Z. Prijic,R.S. Popovic, Low-Noise silicon avalanche photodiodes fabricated in conventional CMOS technologies. IEEE Trans. Electron Devices 49(3), 387–394 (2002)Google Scholar
  11. 11.
    B. Nakhkoob, S. Ray, M. Hella, High speed photodiodes in standard nanometer scale cmos technology: a comparative study. Opt. Express 20, 11256–11270 (2012)ADSCrossRefGoogle Scholar
  12. 12.
    T.K. Woodward, A.V. Krishnamoorthy, 1 Gbit/s CMOS photoreceiver with integrated photodetector operating at 850 nm. IEE Electron. Lett. 34(12), 1252–1253 (1998)CrossRefGoogle Scholar
  13. 13.
    R.J. McIntyre, Multiplication noise in uniform avalanche diodes. IEEE Trans. Electron Devices 13(1), 164–168 (1966)ADSCrossRefGoogle Scholar
  14. 14.
    M.-J. Lee, W.-Y. Choi, Performance comparison of two types of silicon avalanche photodetectors based on N-well/P-substrate and P+/N-well junctions fabricated with standard CMOS technology. J. Opt. Soc. korea 15(1), 1–3 (2011)CrossRefGoogle Scholar
  15. 15.
    H. Zimmermann, H. Dietrich, A. Ghazi, P. Seegebrecht, Fast CMOS-Integrated finger photodiodes for a wide spectral range. ESSDERC 435–438 (2002)Google Scholar
  16. 16.
    T.K. Woodward, A.V. Krishnamoorthy, 1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm. Electron. Lett. 34(12), 1252–1253 (1998)CrossRefGoogle Scholar
  17. 17.
    T.K. Woodward, A.V. Krishnamoorthy, 1 Gbit/s integrated optical detectors and receivers in commercial cmos technologies. IEEE J. Sel. Top. Quantum Electron 5(2), 146–156 (1999)CrossRefGoogle Scholar
  18. 18.
    W.-K. Huang, Y.-C. Liu, Y.-M. Hsin, A high-speed and high-responsivity photodiode in standard CMOS technology. IEEE Photonics Technol. Lett. 19(4), 197–199 (2007)ADSCrossRefGoogle Scholar
  19. 19.
    B. Ciftcioglu, L. Zhang, J. Zhang, J.R. Marciante, J. Zuegel, R. Sobolewski, W. Hui, Integrated silicon PIN photodiodes using deep N-Well in a standard 0.18 um CMOS technology. J. Lightwave Technol. 27(15), 3303–3323 (2009)ADSCrossRefGoogle Scholar
  20. 20.
    W.-Z. Chen, S.-H. Huang, A 2.5 Gbps CMOS fully integrated optical receicer with lateral PIN detector, in IEEE 2007 Custom Intergrated Circuits Conference (CICC), (2007), pp. 293–296Google Scholar
  21. 21.
    D. Coppee, W. Pan, R. Vounckx, M. Kuijk, The spatially modulated light detector. Opt. Fiber Conf. OSA Tech. Dig. Ser. pp. 315–316 (1998)Google Scholar
  22. 22.
    J. Genoe, D. Coppee, J.H. Stiens, R.A. Vounckx, M. Kuijk, Calculation of the current response of the spatially modulated light CMOS detector. IEEE Trans. Electron. Dev. 48(9), 1892–1902 (2001)ADSCrossRefGoogle Scholar
  23. 23.
    M. Kuijk, D. Coppee, R. Vounckx, Spatially modulated light detector in CMOS with sense-amplifier receiver operating at 180 Mb/s for optical data link applications and parallel optical interconnects between chips. IEEE J. Sel. Top. Quantum Electron. 4(6), 1040–1045 (1998)CrossRefGoogle Scholar
  24. 24.
    T.-C. Kao, F. Musa, A. Carusone, A 5-gbit/s cmos optical receiver with integrated spatially modulated light detector and equalization. IEEE Trans. Circuits Syst. I: Regul. Pap. 57, 2844–2857 (2010)MathSciNetCrossRefGoogle Scholar
  25. 25.
    T.-C. Kao, F. Musa, A. Carusone, A 5-gbit/s cmos optical receiver with integrated spatially modulated light detector and equalization. IEEE Trans. Circuits Syst. I: Regul. Pap. 57, 2844–2857 (2010)MathSciNetCrossRefGoogle Scholar
  26. 26.
    A. Polzer, K. Schneider-Hornstein, J. Dong, P. Kostov, H. Zimmermann, Investigation of triple-junction photodetector in 90 nm CMOS technology. PROC EUROSENSORS XXV, Procedia Eng. 25, 864–867 (2011)CrossRefGoogle Scholar
  27. 27.
    A. Pauchard, A. Rochas, Z. Randjelovic, P. Besse, R. Popovic, Ultraviolet avalanche photodiode in cmos technology. Int. Electron Devices Meet. (IEDM ’00) 709–712 (2000)Google Scholar

Copyright information

© Springer International Publishing Switzerland 2016

Authors and Affiliations

  1. 1.Faculty of EngineeringAssiut UniversityAssiutEgypt
  2. 2.Institute of Electrodynamics, Microwave and Circuit EngineeringTU WienViennaAustria

Personalised recommendations