Abstract
This chapter contains aspects like technology selection and scaling of photodiode performance. Classical PN junction, double-junction photodiodes, finger photodiodes, PIN photodiodes, a spatially modulated light detector, a triple-junction photodetector and avalanches photodiodes in nanometer CMOS are described. A comparison completes this chapter.
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References
H. Zimmermann, Integrated Silicon Optoelectronics, 2nd edn. (Springer, Berlin, 2010)
C. Hermans, M. Steyaert, Broadband Opto-Electrical Receivers in Standard CMOS (Springer, Netherlands, 2007)
M. Atef, A. Polzer, H. Zimmermann, High-speed photodiodes in 40 nm standard CMOS technology. Sens. Actuators A Phys. (2013)
M. Atef, A. Polzer, H. Zimmermann, Avalanche double photodiode in 40nm standard CMOS technology. J. Quantum Electron. (Submitted) (2013)
M.-J. Lee, W.-Y. Choi, A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product. Opt. Express 18(23), 24189–24194 (2010)
ETSI TS 105 175-1 V1.1.1(2010-01), Access, Terminals, Transmission and Multiplexing (ATTM); Plastic Optical Fibre System Specifications for 100 Mbit/s and 1 Gbit/s (2010). http://www.etsi.org/WebSite/homepage.aspx
M. Atef, R. Swoboda, H. Zimmermann, 1.25 Gbit/s over 50 m step-index plastic optical fiber using a fully integrated optical receiver with an integrated equalizer. J. Lightwave Technol. 30(1), 118–122 (2012)
M. Atef, H. Zimmermann, Optical receiver using noise cancelling with an integrated photodiode in 40 nm cmos technology. IEEE Trans. Circuits Syst. I (TCAS I) (2013)
H. Zimmermann, K. Kieschnick, T. Heide, A. Ghazi, Integrated high-speed, high-responsivity Photodiode in CMOS and BiCMOS technology, in Proceeding of the 29th. European Solid-State Device Research Conference, (1999), pp. 332–335
A, Rochas, A.R. Pauchard, P.-A. Besse, D. Pantic, Z. Prijic,R.S. Popovic, Low-Noise silicon avalanche photodiodes fabricated in conventional CMOS technologies. IEEE Trans. Electron Devices 49(3), 387–394 (2002)
B. Nakhkoob, S. Ray, M. Hella, High speed photodiodes in standard nanometer scale cmos technology: a comparative study. Opt. Express 20, 11256–11270 (2012)
T.K. Woodward, A.V. Krishnamoorthy, 1 Gbit/s CMOS photoreceiver with integrated photodetector operating at 850 nm. IEE Electron. Lett. 34(12), 1252–1253 (1998)
R.J. McIntyre, Multiplication noise in uniform avalanche diodes. IEEE Trans. Electron Devices 13(1), 164–168 (1966)
M.-J. Lee, W.-Y. Choi, Performance comparison of two types of silicon avalanche photodetectors based on N-well/P-substrate and P+/N-well junctions fabricated with standard CMOS technology. J. Opt. Soc. korea 15(1), 1–3 (2011)
H. Zimmermann, H. Dietrich, A. Ghazi, P. Seegebrecht, Fast CMOS-Integrated finger photodiodes for a wide spectral range. ESSDERC 435–438 (2002)
T.K. Woodward, A.V. Krishnamoorthy, 1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm. Electron. Lett. 34(12), 1252–1253 (1998)
T.K. Woodward, A.V. Krishnamoorthy, 1 Gbit/s integrated optical detectors and receivers in commercial cmos technologies. IEEE J. Sel. Top. Quantum Electron 5(2), 146–156 (1999)
W.-K. Huang, Y.-C. Liu, Y.-M. Hsin, A high-speed and high-responsivity photodiode in standard CMOS technology. IEEE Photonics Technol. Lett. 19(4), 197–199 (2007)
B. Ciftcioglu, L. Zhang, J. Zhang, J.R. Marciante, J. Zuegel, R. Sobolewski, W. Hui, Integrated silicon PIN photodiodes using deep N-Well in a standard 0.18 um CMOS technology. J. Lightwave Technol. 27(15), 3303–3323 (2009)
W.-Z. Chen, S.-H. Huang, A 2.5 Gbps CMOS fully integrated optical receicer with lateral PIN detector, in IEEE 2007 Custom Intergrated Circuits Conference (CICC), (2007), pp. 293–296
D. Coppee, W. Pan, R. Vounckx, M. Kuijk, The spatially modulated light detector. Opt. Fiber Conf. OSA Tech. Dig. Ser. pp. 315–316 (1998)
J. Genoe, D. Coppee, J.H. Stiens, R.A. Vounckx, M. Kuijk, Calculation of the current response of the spatially modulated light CMOS detector. IEEE Trans. Electron. Dev. 48(9), 1892–1902 (2001)
M. Kuijk, D. Coppee, R. Vounckx, Spatially modulated light detector in CMOS with sense-amplifier receiver operating at 180 Mb/s for optical data link applications and parallel optical interconnects between chips. IEEE J. Sel. Top. Quantum Electron. 4(6), 1040–1045 (1998)
T.-C. Kao, F. Musa, A. Carusone, A 5-gbit/s cmos optical receiver with integrated spatially modulated light detector and equalization. IEEE Trans. Circuits Syst. I: Regul. Pap. 57, 2844–2857 (2010)
T.-C. Kao, F. Musa, A. Carusone, A 5-gbit/s cmos optical receiver with integrated spatially modulated light detector and equalization. IEEE Trans. Circuits Syst. I: Regul. Pap. 57, 2844–2857 (2010)
A. Polzer, K. Schneider-Hornstein, J. Dong, P. Kostov, H. Zimmermann, Investigation of triple-junction photodetector in 90 nm CMOS technology. PROC EUROSENSORS XXV, Procedia Eng. 25, 864–867 (2011)
A. Pauchard, A. Rochas, Z. Randjelovic, P. Besse, R. Popovic, Ultraviolet avalanche photodiode in cmos technology. Int. Electron Devices Meet. (IEDM ’00) 709–712 (2000)
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Atef, M., Zimmermann, H. (2016). Integrated Photodiodes in Nanometer CMOS Technologies. In: Optoelectronic Circuits in Nanometer CMOS Technology. Springer Series in Advanced Microelectronics, vol 55. Springer, Cham. https://doi.org/10.1007/978-3-319-27338-9_5
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