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Basics of Photodiodes

  • Mohamed AtefEmail author
  • Horst Zimmermann
Chapter
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 55)

Abstract

The integrated photodiode is the first stage in the monolithically integrated optical receiver. The photodiode converts the optical power into an electrical current. The photodiode should convert photons into electron and hole pairs with maximum efficiency and to transport them to the electrodes as fast as possible.

Keywords

Optical Power Shot Noise Diffusion Region Internal Quantum Efficiency Drift Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    H. Zimmermann, Integrated Silicon Optoelectronics, second edn. (Springer, Berlin, 2010)CrossRefGoogle Scholar
  2. 2.
    K. Schneider, H. Zimmermann, Highly Sensitive Optical Receivers (Springer, Berlin, 2006)CrossRefGoogle Scholar
  3. 3.
    H. Zimmermann, Silicon Optoelectronic Integrated Circuits (Springer, Berlin, 2004)CrossRefGoogle Scholar
  4. 4.
    W.J. Liu, O.T.-C. Chen, L.-K. Dai, F.-W. Jih, A CMOS Photodiode Model, in IEEE International Workshop on Behavioral Modeling and Simulation, Santa Rosa, Chung Cheng, California (2001)Google Scholar
  5. 5.
    C.W.G. Winstel, Optoelektronik II (Springer, Berlin, 1986)CrossRefGoogle Scholar
  6. 6.
    S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)Google Scholar
  7. 7.
    S.-H. Huang, W.-Z. Chen, Y.-W. Chang, Y.-T. Huang, A 10-Gb/s OEIC with meshed spatially-modulated photodetector in \(0.18\,\upmu {\rm m}\) CMOS technology. IEEE J. Solid-State Circuits 46(5), 1158–1169 (2011)CrossRefGoogle Scholar
  8. 8.
    H. Zimmermann, H. Dietrich, A. Ghazi, P. Seegebrecht, Fast CMOS-Integrated Finger Photodiodes for aWide Spectral Range, ESSDERC, pp. 435–438 (2002)Google Scholar
  9. 9.
    B. Ciftcioglu, L. Zhang, J. Zhang, J.R. Marciante, J. Zuegel, R. Sobolewski, Wu Hui, Integrated silicon PIN photodiodes using deep N-well in a standard \(0.18\,\upmu {\rm m}\) CMOS technology. J. Lightwave Technol. 27(15), 3303–3323 (2009)ADSCrossRefGoogle Scholar
  10. 10.
    M.-J. Lee, W.-Y. Choi, Performance comparison of two types of silicon avalanche photodetectors based on N-well/P-substrate and P+/N-well junctions fabricated with standard CMOS technology. J. Opt. Soc. Korea 15(1), 1–3 (2011)CrossRefGoogle Scholar
  11. 11.
    D.M. Caughey, R.E. Thomas, Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE 55, 2192–2193 (1967)CrossRefGoogle Scholar
  12. 12.
    S. Selberherr, Process and device modeling for VLSI. Microelectron. Reliab. 24(2), 225–257 (1984)MathSciNetCrossRefGoogle Scholar
  13. 13.
    U. Mishra, J. Singh, Semiconductor Device Physics and Design (Springer, Netherlands, 2008)Google Scholar
  14. 14.
    M.D. Hussein Ballan, High Voltage Devices and Circuits in Standard CMOS Technologies (Springer, 1999)Google Scholar
  15. 15.
    R. Swoboda, High-Speed Integrated Optical Receivers, Ph.D. thesis, Vienna University of Technology, 2007Google Scholar
  16. 16.
    E. Palik, Handbook of Optical Constants of Solids (Academic, Orlando, 1985)Google Scholar
  17. 17.
    J. Sturm, Photodiode Modeling and Optoelectronic Integrated Circuits for Optical -Data - Storage Applications, Ph.D. thesis, Vienna University of Technology, 2006Google Scholar
  18. 18.
    A. Polzer, K. Schneider-Hornstein, J. Dong, P. Kostov, H. Zimmermann, Investigation of triple-junction photodetector in 90 nm CMOS technology, Proceedings EUROSENSORS XXV, Procedia Engineering, vol. 25, pp.864–867 (2011)Google Scholar
  19. 19.
    F. Tavernier, M. Steyaert, High-speed optical receivers with integrated photodiode in 130 nm CMOS. IEEE J. Solid-State Circuits 44, 2856–2867 (2009)CrossRefGoogle Scholar
  20. 20.
    B. Nakhkoob, S. Ray, M. Hella, High speed photodiodes in standard nanometer scale cmos technology: a comparative study. Opt. Express 20, 11256–11270 (2012)ADSCrossRefGoogle Scholar
  21. 21.
    J. Gao, Optoelectronic Integrated Circuit Design and Device Modeling, 3rd edn. (Wiley, China, 2011)Google Scholar
  22. 22.
    R.J. McIntyre, Multiplication noise in uniform avalanche diodes. IEEE Trans. Electron Devices 13(1), 164–168 (1966)ADSCrossRefGoogle Scholar
  23. 23.
    G.P. Agrawal, Fiber-Optic Communication Systems, 2nd edn. (Wiley, New York, 1997)Google Scholar
  24. 24.
    E. Säckinger, Broadband Circuits for Optical Fiber Communication (Wiley, New Jersey, 2005)CrossRefGoogle Scholar
  25. 25.
    C. Hermans, M. Steyaert, Broadband Opto-Electrical Receivers in Standard CMOS (Springer, Netherlands, 2007)Google Scholar

Copyright information

© Springer International Publishing Switzerland 2016

Authors and Affiliations

  1. 1.Faculty of EngineeringAssiut UniversityAssiutEgypt
  2. 2.Institute of Electrodynamics, Microwave and Circuit EngineeringTU WienViennaAustria

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