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Development of New Metamaterials for Advanced Element Base of Micro- and Nanoelectronics, and Microsystem Devices

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Abstract

The results of experimental researches of the geometrical parameters of vertically aligned carbon nanotubes (VACNTs) are present by atomic force microscopy. The analysis of the applicability of the different AFM modes to determine the geometrical parameters of VACNTs array was carried out and based on this analysis the rapid-technique for determination of the length of the nanotubes in VACNTs array was developed. Unified two-layer polysilicon surface micromachining process for manufacture of biaxial micromechanical gyroscope , triaxial micromechanical accelerometer and biaxial nanomechanical accelerometer was proposed. Polysilicon inertial masses were fabricated by optical lithography, dry etching under different masks and wet etching of sacrificial layer. We developed AFM-technique for determination of electrical parameters GaAs nanowires (NWs) , which does not require additional operations of NW fixation and allows one to estimate the resistivity and conductivity type of NW material. The obtained results can use to develop of the nanodiagnostic methods and the processes of formation of micro- and nanoelectronic elements based.

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Acknowledgments

This research was financially supported by the Ministry of Education and Science of Russian Federation: projects Nos. 1936, 16.1154.2014/K (items 40.2 and 40.3), project 14.575.21.0045 unique identifier RFMEFI57514X0045 (item 40.4); by the Russian Foundation for Basic Research: project Nos. 14-07-31322_mol_a, 14-07-31162_mol_a, 14-08-90010-Bel_a (items 40.2, 40.3 and 40.5); by the Russian Science Foundation: grant No. 15-19-10006 (item 40.6). The experimental results were obtained on the equipment of the Research and Educational Center and Centre of Collective Use “Nanotechnologies” of the Southern Federal University.

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Ageev, O.A. et al. (2016). Development of New Metamaterials for Advanced Element Base of Micro- and Nanoelectronics, and Microsystem Devices. In: Parinov, I., Chang, SH., Topolov, V. (eds) Advanced Materials. Springer Proceedings in Physics, vol 175. Springer, Cham. https://doi.org/10.1007/978-3-319-26324-3_40

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