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Above Room Temperature Ferromagnetism in Dilute Magnetic Oxide Semiconductors

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Book cover Novel Functional Magnetic Materials

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 231))

Abstract

In this chapter, we will survey early and recent experimental results on magnetic properties of dilute magnetic oxide semiconductors, focusing on TiO2-δ:Co and TiO2-δ:V. Room temperature ferromagnetism was observed in both types of thin film samples fabricated by RF sputtering, but their magnetic properties appeared to be quite different. Magnetic moments in case of TiO2-δ:Co are mostly associated with local polarization of Co ions and induced defects. There is an evidence of intrinsic ferromagnetism in the case of low Co content (<1 at.%). Room temperature ferromagnetism was observed in TiO2-δ:V at V content from 3 up to 18 at.% in the whole resistivity range from 10−3 up to 106 Ω cm. Positron annihilation spectroscopy revealed a correlation between magnetization and concentration of the negatively charged defects in TiO2-δ:V thin films. The origin of room temperature ferromagnetism in these systems is discussed. Besides, the recent research findings in ZnO-based magnetic semiconductors are briefly discussed with focus on defect-induced ferromagnetism.

“Do not give up hope, maestro!”

Bulat Okudjava

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Abbreviations

AHE:

Anomalous Hall effect

DMO:

Dilute magnetic oxides

DMS:

Dilute magnetic semiconductors

EDX:

Energy dispersive X-ray analysis

MO:

Magneto-optical

PAS:

Positron annihilation spectroscopy

RF:

Radio frequency

SQUID:

Superconducting quantum interference device

TKE:

Transversal Kerr effect

TM:

Transition metal

XANES:

X-ray absorption near-edge structure

XMCD:

X-ray magnetic circular dichroism

XRD:

X-ray diffraction

ZFC/FC:

Zero field cooled/field cooled

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Acknowledgments

This work is partially supported by the Initiative and Networking Fund of the German Helmholtz Association, Helmholtz-Russia Joint Research Group HRJRG-314, and the Russian Foundation for Basic Research, RFBR #12-02-91321-SIG_a.

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Authors and Affiliations

  1. Faculty of Physics, Lomonosov Moscow State University, Moscow, 119991, Russia

    A. S. Semisalova, A. Smekhova, E. Gan’shina, N. Perov & A. Granovsky

  2. Lappeenranta University of Technology, Lappeenranta, 53851, Finland

    A. S. Semisalova & E. Lähderanta

  3. Helmholtz-Zentrum Dresden - Rossendorf, Dresden, 01328, Germany

    A. S. Semisalova, W. Anwand & K. Potzger

  4. Federal State Research and Design Institute of Rare Metal Industry, Moscow, 119017, Russia

    A. Orlov

  5. Fakultät für Physik, Experimentalphysik, Universität Duisburg-Essen, Duisburg, 47048, Germany

    A. Smekhova

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  1. A. S. Semisalova
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  1. UPV/EHU, Basque Country University, San Sebastian, Spain

    Arcady Zhukov

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Semisalova, A.S. et al. (2016). Above Room Temperature Ferromagnetism in Dilute Magnetic Oxide Semiconductors. In: Zhukov, A. (eds) Novel Functional Magnetic Materials. Springer Series in Materials Science, vol 231. Springer, Cham. https://doi.org/10.1007/978-3-319-26106-5_5

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