Abstract
The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in \(CF_4/H_2\) gas mixture was studied. The chemical kinetic model contained 28 gas-phase reactions of dissociation and recombination processes and 6 heterogeneous reactions on the wafer, which included the products - F, \(F_2\), \(CF_2\), \(CF_3\), \(CF_4\), \(C_2F_6\), H, \(H_2\), HF, \(CHF_3\), \(CH_2F_2\). The concentrations of chemical components were calculated from the system of conservation equations included the mentioned gas-phase reactions. The governing equations were numerically solved by iterative finite difference splitting-up method. It is shown that the \(CF_4/H_2\) system is characterized by lower fluorine concentrations and higher \(CF_2\), \(CF_3\) coverage of silicon surface compared to the \(CF_4/O_2\) system.
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Gorobchuk, A. (2015). Numerical Model of Plasma-Chemical Etching of Silicon in \(CF_4/H_2\) Plasma. In: Danaev, N., Shokin, Y., Darkhan, AZ. (eds) Mathematical Modeling of Technological Processes. CITech 2015. Communications in Computer and Information Science, vol 549. Springer, Cham. https://doi.org/10.1007/978-3-319-25058-8_5
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DOI: https://doi.org/10.1007/978-3-319-25058-8_5
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