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Growth Techniques of AlN/AlGaN and Development of High-Efficiency Deep-Ultraviolet Light-Emitting Diodes

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III-Nitride Ultraviolet Emitters

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 227))

Abstract

Recent advances in the performance of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) and the development of crystal growth techniques for wide-bandgap AlN and AlGaN materials are discussed. DUV LEDs in the spectral range between 222 and 351 nm have been demonstrated. Significant increases in the internal quantum efficiency (IQE) of AlGaN quantum wells (QWs) have been achieved by growth on low-threading dislocation-density (TDD) AlN obtained by ammonia pulsed-flow multilayer growth. Electron Injection efficiency (EIE) in DUV LEDs was significantly improved by introducing a multi-quantum barrier (MQB) and light-extraction efficiency (LEE) was enhanced by developing transparent p-AlGaN contact layers. The maximum external quantum efficiency (EQE) obtained was 7 % for a 279 nm DUV LED. EQEs in the double-digit ranges are anticipated in the near future by further improving LEE, e.g., by utilizing transparent contact layers and pillar array buffer layers.

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Authors and Affiliations

  1. RIKEN, Quantum Optodevice Laboratory, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan

    Hideki Hirayama

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  1. Hideki Hirayama
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Correspondence to Hideki Hirayama .

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Editors and Affiliations

  1. Institute of Solid state Physics, Technische Universität Berlin, Berlin, Germany

    Michael Kneissl

  2. Institute of Solid state Physics, Technische Universität Berlin, Berlin, Germany

    Jens Rass

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Hirayama, H. (2016). Growth Techniques of AlN/AlGaN and Development of High-Efficiency Deep-Ultraviolet Light-Emitting Diodes. In: Kneissl, M., Rass, J. (eds) III-Nitride Ultraviolet Emitters. Springer Series in Materials Science, vol 227. Springer, Cham. https://doi.org/10.1007/978-3-319-24100-5_4

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