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Hard X-ray Photoelectron Spectroscopy (HAXPES) pp 533–554Cite as

Photoelectron Microscopy and HAXPES

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Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 59))

Abstract

High energy X-ray photoelectron spectroscopy (HAXPES) has emerged as an important materials analytical technique in several technology areas including semiconductor device analysis and in situ catalysis. The next instrumental challenge is taking development of the HAXPES technique beyond high-energy photoelectron spectroscopy to high-energy photoelectron microscopy. In this chapter we argue that a new symbiosis is possible that will integrate the rich chemical and structural information derived from HAXPES spectroscopy with the techniques of low-energy high spatial resolution photoelectron microscopy. This integration will produce a powerful materials analysis technology with a wide range of real world applications. It is expected that chemical-state analysis on the mesoscale enabled by HAXPES microscopy will make a significant contribution.

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    Raymond Browning

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  1. Brookhaven National Laboratory, National Institute of Standards and Technology, Upton, New York, USA

    Joseph Woicik

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Browning, R. (2016). Photoelectron Microscopy and HAXPES. In: Woicik, J. (eds) Hard X-ray Photoelectron Spectroscopy (HAXPES). Springer Series in Surface Sciences, vol 59. Springer, Cham. https://doi.org/10.1007/978-3-319-24043-5_19

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