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Memristor-Based Nanoelectronic Computing Circuits and Architectures pp 149–172Cite as

High-Radix Arithmetic-Logic Unit (ALU) Based on Memristors

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Part of the book series: Emergence, Complexity and Computation ((ECC,volume 19))

Abstract

This chapter presents a novel method for implementing crossbar-based multi-level memories, where each cross-point cell stores multiple bits. Furthermore, a conceptual solution for novel CMOS-compatible, memristive, high-radix arithmetic logic units (ALUs) is proposed, for future computing systems. More specifically, a hybrid ALU circuit nano-architecture is described, where: (a) CMOS peripheral circuits are used for binary arithmetic operations; (b) a memristive reconfigurable crossbar-based memory block is used to: (i) allow parallel read/write of data; (ii) facilitate the implementation of efficient arithmetic algorithms (e.g. fast partial product creation for multiplication); and (iii) store information in a compact, high-radix form. Instead of single memristors, the crossbar nodes comprise a type of multi-state composite memristive switches, described in Chap. 3, which permit multi-bit storage in a more robust manner. Radix-4 representation is used because: (i) it balances the offered advantages with the peripheral binary conversion circuitry overhead; and (ii) it provides a good density/reliability trade-off. The fine operation and accuracy of the proposed system architecture is demonstrated through SPICE-level simulations.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi, Greece

    Ioannis Vourkas & Georgios Ch. Sirakoulis

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  1. Ioannis Vourkas
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  2. Georgios Ch. Sirakoulis
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Correspondence to Ioannis Vourkas .

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Vourkas, I., Sirakoulis, G.C. (2016). High-Radix Arithmetic-Logic Unit (ALU) Based on Memristors. In: Memristor-Based Nanoelectronic Computing Circuits and Architectures. Emergence, Complexity and Computation, vol 19. Springer, Cham. https://doi.org/10.1007/978-3-319-22647-7_6

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  • DOI: https://doi.org/10.1007/978-3-319-22647-7_6

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  • Online ISBN: 978-3-319-22647-7

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