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Magneto-Transport Results in Alq3 Based OSVs

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Molecular Spintronics

Part of the book series: Springer Theses ((Springer Theses))

Abstract

The achievement of good magnetoresistance signal at room temperature is an important requirement for the possible future development of organic devices for applications. However, until now only few works reported room temperature MR effect in organic spin valves (OSVs). In this regard, this chapter is dedicated to the investigation of Alq3-based OSVs where Alq3 molecule was chosen since it is a standard material in the field. A systematic study on Co/Alq3/Co OSVs will be presented showing room temperature MR results. Moreover, inelastic electron tunneling spectroscopy (IETS) technique will be used to prove spin injection into the organic layer. Finally, an insulating oxide barrier (Al2O3 or MgO) will be also inserted at the bottom or top interface. This will allow to separately investigate the specific role of ferromagnetic metal/molecule hybridization at each interface and understand their influence on the spin polarization properties.

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Notes

  1. 1.

    The results of this model are similar to the resonant tunneling inversion that was introduced for inorganic semiconductor MTJs [19, 20].

  2. 2.

    For a more complete picture, one would have to consider that coupling strength of different orbitals will also be magnetization orientation dependent.

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Authors and Affiliations

  1. Institute of Molecular Science, University of Valencia, Valencia, Paterna, Spain

    Marta Galbiati

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  1. Marta Galbiati
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Correspondence to Marta Galbiati .

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Galbiati, M. (2016). Magneto-Transport Results in Alq3 Based OSVs. In: Molecular Spintronics. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-22611-8_8

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