Abstract
Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy plasma ions up to a depth of several thousand lattice units. The plasma ions have energies of 2–8 eV and therefore can deliver energies of the order of a few eV to the germanium atoms. The most abundant defect is identified as the E-center, a complex of the dopant antimony and a vacancy with an annealing energy of 1.3 eV as determined by our measurements. The inductively coupled plasma has a very low density and a very low flux of ions. This implies that the ion impacts are almost isolated both in time and at the surface of the semiconductor. We conclude that energy of the order of an eV is able to travel a large distance in germanium in a localized way and is delivered to the defects effectively. The most likely candidates are vibrational nonlinear wave packets known as intrinsic localized modes, which exist for a limited range of energies. This property is coherent with the fact that more energetic ions are less efficient at producing the annealing effect.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Notes
- 1.
NEMI 2012: 1st International Workshop: Nonlinear effects in materials under irradiation, March 12–17, 2012, Pretoria, South Africa. P. Selyshev, chairman.
References
Archilla, J.F.R., Coelho, S.M.M., Auret, F.D., Dubinko, V.I., Hizhnyakov, V.: Long range annealing of defects in germanium by low energy plasma ions. Physica D 297, 56–61 (2015)
Ashcroft, N.W., Mermin, N.D.: Solid State physics. Saunders College Publishing, Philadelphia (1976)
Berger, L.I.: Semiconductor Materials. CRC Press, London (1996)
Coelho, S.M.M., Archilla, J.F.R., Auret, F.D., Nel, J.M.: The origin of defects induced in ultra-pure germanium by electron beam deposition. In: J.F.R. Archilla, N. Jiménez, V.J. Sánchez-Morcillo, L.M. García-Raffi (eds.) Quodons in Mica: Nonlinear Localized Travelling Excitations in Crystals, pp. 363–380. Springer, Berlin (2015)
Coelho, S.M.M., Auret, F.D., Janse van Rensburg, P.J., Nel, J.: Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure. J. Appl. Phys. 114(17), 173708 (2013)
Dimitrijev, S.: Irreversible event-based model for thermal emission of electrons from isolated traps. J. Appl. Phys. 105, 103706 (2009)
Dove, M.T.: Introduction to Lattice Dynamics. Cambridge University Press, Cambridge (2005)
Dubinko, V.I., Archilla, J.F.R., Dmitriev, S.V., Hizhnyakov, V.: Rate theory of acceleration of defect annealing driven by discrete breathers. In: J.F.R. Archilla, N. Jiménez, V.J. Sánchez-Morcillo, L.M. García-Raffi (eds.) Quodons in Mica: Nonlinear Localized Travelling Excitations in Crystals, pp. 381–398. Springer, Berlin (2015)
Dubinko, V.I., Dubinko, A.V.: Modification of reaction rates under irradiation of crystalline solids: contribution from intrinsic localized modes. Nucl. Instrum. Meth. B 303, 133–135 (2013)
Dubinko, V.I., Selyshchev, P.A., Archilla, J.F.R.: Reaction-rate theory with account of the crystal anharmonicity. Phys. Rev. E 83, 041124 (2011)
Fage-Pedersen, J., Larsen, A.N.: Irradiation-induced defects in Ge studied by transient spectroscopies. Phys. Rev. B 62, 10116 (2000)
Holmström, E., Nordlund, K., Kuronen, A.: Threshold defect production in germanium determined by density functional theory molecular dynamics simulations. Phys. Scr. 81, 035601 (2010)
Karamitaheri, H., Neophytou, N., Kosina, H.: Ballistic phonon transport in ultra-thin silicon layers: effects of confinement and orientation. J. Appl. Phys. 113(20), 204305 (2013)
Kolkovsky, V., Petersen, M.C., Larsen, A.N.: Alpha-particle irradiation-induced defects in n-type germanium. Appl. Phys. Lett. 90(11), 112110 (2007)
Lacroix, D., Joulain, K., Lemonnier, D.: Monte carlo transient phonon transport in silicon and germanium at nanoscales. Phys. Rev. B 72, 064305 (2005)
Lang, D.V.: Deep-level transient spectroscopy: a new method to characterize traps in semiconductors. J. Appl. Phys. 45(7), 3023–3032 (1974)
Lide, D.R. (ed.): Handbook of Chemistry and Physics, 90th edn. CRC Press, Boca Raton (2010)
Markevich, V.P., Peakera, A.R., Litvinov, V.V., Emtsev, V.V., Murin, L.I.: Electronic properties of antimony-vacancy complex in Ge crystals. J. Appl. Phys. 95, 4078 (2004)
Northrop, G.A., Wolfe, J.P.: Ballistic phonon imaging in germanium. Phys. Rev. B 22, 6196–6212 (1980)
Nyamhere, C.: Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and laplace-DLTS. Ph.D. thesis, University of Pretoria. http://upetd.up.ac.za/thesis/available/etd-02022010-134937/ (2009). Accessed 14 March 2015
Roro, K., Janse van Rensburg, P., Auret, F., Coelho, S.M.M.: Effect of alpha-particle irradiation on the electrical properties of n-type Ge. Physica B 404(22), 4496–4498 (2009)
Schroder, D.K.: Semiconductor Material and Device Characterization, 3rd edn. John wiley, New Jersey (2006)
Tahini, H., Chroneos, A., Grimes, R.W., Schwingenschlo, U., Bracht, H.: Diffusion of E centers in germanium predicted using GGA+U approach. Appl. Phys. Lett. 99, 072112 (2011)
Voulgarakis, N.K., Hadjisavvas, S., Kelires, P.C., Tsironis, G.P.: Computational investigation of intrinsic localization in crystalline Si. Phys. Rev. B 69, 113201(1–4) (2004)
Wei, S., Chou, M.Y.: Phonon dispersion of silicon and germanium from first principles calculations. Phys. Rev. B 50, 2221 (1994)
Wikipedia: Sine-gordon equation. http://en.wikipedia.org/wiki/Sine-Gordon_equation (2015). Accessed 6 Apr 2015
Acknowledgments
The authors were funded by MICINN, project FIS2008-04848; the South African National Research Foundation and the European Regional Development Fund, Centre of Excellence Mesosystems: Theory and Applications. JFRA and VD acknowledges the Physics Institute in Tartu for their hospitality.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2015 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Archilla, J.F.R., Coelho, S.M.M., Auret, F.D., Nyamhere, C., Dubinko, V.I., Hizhnyakov, V. (2015). Experimental Observation of Intrinsic Localized Modes in Germanium. In: Archilla, J., Jiménez, N., Sánchez-Morcillo, V., García-Raffi, L. (eds) Quodons in Mica. Springer Series in Materials Science, vol 221. Springer, Cham. https://doi.org/10.1007/978-3-319-21045-2_14
Download citation
DOI: https://doi.org/10.1007/978-3-319-21045-2_14
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-21044-5
Online ISBN: 978-3-319-21045-2
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)