Abstract
In this chapter, we study the DR under cross-field configuration in bulk specimens of HD non-linear optical, III–V, II–VI, IV–VI and stressed Kane type semiconductors on the basis of newly formulated E-k relation respectively. The DRs in this case are quantized displaced non-parabolas in the k {2}{z} − k{y} plane. The Drs are concentration dependent which is possible only under band-tailing effect. The subband energies are complex for non-removable poles in the finite s-plane. The subband energies also depend on concentration due to band tails. The DOS functions depend on electric field, concentration and the position of branch-cut changes from denominator to numerator. The cross fields introduces energy and quantum number dependent mass anisotropy. The Effective mass exists in the band gap which is impossible without band tailing effect. This chapter contains 3 open research problems.
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Ghatak, K. (2016). The DR in HDs Under Cross-Fields Configuration. In: Dispersion Relations in Heavily-Doped Nanostructures. Springer Tracts in Modern Physics, vol 265. Springer, Cham. https://doi.org/10.1007/978-3-319-21000-1_8
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