The DR in Heavily Doped Ultra-thin Films (HDUFs) Under Cross-Fields Configuration

Abstract

In this chapter, we study the DR under cross-field configuration in Ultra thin films (UFs) of HD non-linear optical, III–V, II–VI, IV–VI and stressed Kane type semiconductors on the basis of newly formulated E-k relation respective cases. The DRs under cross field configuration in ultra-thin films of HD materials exhibit the fact that the electron motion along k_y direction is free i.e. the materials become less degenerate. The DRs in this case are quantized straight lines. The DRs concentration dependent which is possible only under band-tailing effect. The subband energies also depend on concentration due to band tails. The cross fields introduces energy and quantum number dependent mass anisotropy. The effective mass exists in the band gap which i9s impossible without band tailing effect. It is the band structure which changes in a fundamental way and consequently all the physical properties of all the electronic materials change radically leading to new physical concept. This chapter contains 3 open research problems. Section 10.4 contains 11 open research problems, which form the integral part of this chapter.

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