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Design for Manufacturability with Advanced Lithography pp 111–157Cite as

Design for Manufacturability with E-Beam Lithography

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Abstract

As the minimum feature size continues to scale to sub-22 nm, conventional 193 nm optical photolithography technology is reaching its printability limit. In the near future, multiple patterning lithography (MPL) has become one of the viable lithography techniques for 22 nm and 14 nm logic nodes [1–4]. In the long run, i.e., for the logic nodes beyond 14 nm, extreme ultra violet (EUV), directed self-assembly (DSA), and electric beam lithography (EBL) are promising candidates as next generation lithography technologies [5]. Currently, both EUV and DSA suffer from some technical barriers: EUV technique is delayed due to tremendous technical issues such as lack of power sources, resists, and defect-free masks [6, 7]; DSA has the potential only to generate contact or via layers [8].

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  1. ECE Department, The University of Texas, Austin, TX, USA

    Bei Yu & David Z. Pan

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  1. Bei Yu
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Yu, B., Pan, D.Z. (2016). Design for Manufacturability with E-Beam Lithography. In: Design for Manufacturability with Advanced Lithography. Springer, Cham. https://doi.org/10.1007/978-3-319-20385-0_5

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  • DOI: https://doi.org/10.1007/978-3-319-20385-0_5

  • Publisher Name: Springer, Cham

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