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ZnO Doping and Defect Engineering—A Review

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Semiconductor Materials for Solar Photovoltaic Cells

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 218))

Abstract

Demand for efficient solid-state lighting (SSL) devices has accelerated in recent years and will continue to grow in the foreseeable future. As a result, interest in developing advanced optoelectronic devices such as light-emitting diodes (LEDs), laser diodes, and photodetectors is increasing. These optoelectronic devices require the use of compound semiconductors with a direct bandgap. In the past, this role was mainly dominated by GaAs and InP compound semiconductors.

One of the coauthors Jun Xu deceased on March 10, 2013.

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Acknowledgements

This research was sponsored by  the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China (61322407, 11474058), the US Department of Energy, National Nuclear Security Administration, Office of Nonproliferation and Verification Research and Development, and Oak Ridge National Laboratory SEED funding.

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  1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China

    Faxian Xiu

  2. Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN, 37831, USA

    Jun Xu, Pooran C. Joshi, Craig A. Bridges & M. Parans Paranthaman

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  1. Faxian Xiu
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  1. Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA

    M. Parans Paranthaman

  2. Material Measurement Laboratory, NIST, Gaithersburg, Maryland, USA

    Winnie Wong-Ng

  3. National Renewable Energy Laboratory, Golden, Colorado, USA

    Raghu N. Bhattacharya

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Xiu, F., Xu, J., Joshi, P.C., Bridges, C.A., Parans Paranthaman, M. (2016). ZnO Doping and Defect Engineering—A Review. In: Paranthaman, M., Wong-Ng, W., Bhattacharya, R. (eds) Semiconductor Materials for Solar Photovoltaic Cells. Springer Series in Materials Science, vol 218. Springer, Cham. https://doi.org/10.1007/978-3-319-20331-7_4

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