Power Semiconductor Devices

Abstract

Many industrial applications require control of power such as in variable speed drives, light-intensity controllers, temperature regulators etc. They are controlled by Power devices such as four-layer devices, semiconductor controlled rectifiers (SCRs) etc. In this regard, a P-N-P-N diode has been explained stating its conduction mechanism, two-transistor analogy, triggering mechanisms etc. SCRs are also explained showing their various shapes and sizes, biasing, operation and triggering. Applications of SCR, half-wave and full-wave power control, and silicon controlled switch are also explained. Bilateral devices such as Diac and Triac are presented along with their working, characteristics and applications. Insulated gate bipolar transistor (IGBT), its characteristics and advantages are also elaborated. Meaning of uni-junction transistor (UJT) and gate controlled switch (GCS) are also briefed. Minute insight into the various topics are given through solved numerical and theoretical examples. Review questions, numerical problems and objective type questions are also given with their answers.

Appendices

Review Questions

Objective Questions

Answers