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Metal Semiconductor Field Effect Transistors, MOS Transistors, and Charge Coupled Device

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Advanced Semiconducting Materials and Devices

Part of the book series: Engineering Materials ((ENG.MAT.))

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Abstract

Detailed classification of different types of transistors is presented. The field-effect transistors (FETs) are exhaustively sub-classified into MESFET, MISFET, MODFET, MOSFET, IGFET, DE-MOSFET, E-only MOSFET, n-channel and p-channel types. The advantageous features of FETs over BJTs and applications of FETs are given. MISFETs: their construction, basic types and performance are discussed. MESFET: its construction, operation and characteristics are explained. MOSFETs: their basic types, construction, operation and short-channel effects are elaborated. IGFET and HEMT, n-channel and p-channel FET are described. The charge coupled devices: its operation and salient uses are explained. Minute insight into the various topics are given through solved numerical and theoretical examples. Review questions, numerical problems and objective type questions are also given with their answers.

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References

  1. Gupta, K.M., Gupta, N.: Advanced Electrical and Electronics Materials. Scrivener Wiley Publishing, USA (2015)

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  2. http://www.topsurveillance.info/index.php/ccdvscmos.html

  3. http://www.olympusmicro.com/primer/digitalimaging/concepts/emccds.html

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Correspondence to K. M. Gupta .

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Gupta, K.M., Gupta, N. (2016). Metal Semiconductor Field Effect Transistors, MOS Transistors, and Charge Coupled Device. In: Advanced Semiconducting Materials and Devices. Engineering Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-19758-6_11

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