Abstract
Atomic oxygen (AO) monitor based on resistance film had been developed for the detection of flux of AO impinging on the surface of the spacecraft in low earth orbit (LEO) and AO erosion effects. The monitor is comprised of electrical resistance film which is made of some AO susceptible conductive materials. The electrical resistance will change as monitor is eroded by AO attack. The AO flux and the erosion rate of flight samples can be deduced by measuring electrical resistance changes in-situ.
An osmium-based AO sensor had been prepared by plating, UV-light etching and metal etching micro processing techniques for AO flux detection. The AO effects sensor consist of silver film and test samples film deposited onto a quartz substrate successively. The material film becomes thinner and thinner by AO attack. When the material film is eroded away completely, exposed silver film would be oxidized quickly and its electrical resistance will become large. By the variation of Ag film electrical resistance, we can determine the erosion time of experiment material film and the material AO erosion rate. The results of ground simulation test of atomic oxygen monitor revealed that the measured resistance increases of AO sensor was agreed with the theoretical values well.
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Liu, X., Tong, J., Dingyigang, Liuyuming, Jiang, H., Zheng, J. (2017). Atomic Oxygen Monitor Based on Resistance Film. In: Kleiman, J. (eds) Protection of Materials and Structures from the Space Environment. Astrophysics and Space Science Proceedings, vol 47. Springer, Cham. https://doi.org/10.1007/978-3-319-19309-0_40
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DOI: https://doi.org/10.1007/978-3-319-19309-0_40
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