Abstract
As discussed in Chap. 1, there is a growing trend of utilizing E-band technology in future mobile network infrastructure, such as small cell or mobile backhauls [1, 2]. It can also be deployed as a low-cost infrastructure complement to fiber. Chapter 6 has shown the feasibility of achieving more than 10 Gb/s data rate with proven silicon in CMOS. To extend the link distance beyond several kilometers, more than 20 dBm output power has to be delivered by the PA. It is obviously not an easy task for CMOS PAs due to the low breakdown voltage and high operating frequencies [3, 4].
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsNotes
- 1.
- 2.
The operating power gain is defined as the ratio of the power delivered from the network to the load and the power fed to the network.
- 3.
The insertion loss of a power divider refers to the extra passive loss in addition to the theoretical loss due to the power splitting (i.e., 3 dB for a 2-way power divider).
References
D. McClearnon, S. S-k, E-band wireless backhaul: system design and test challenges (2014). http://www.keysight.com
J. Wells, Multigigabit Microwave and Millimeter-Wave Wireless Communications (Artech House, Norwood, 2010)
A. Agah, J. Jayamon, P. Asbeck, L. Larson, J. Buckwalter, Multi-drive stacked-fet power amplifiers at 90 GHz in 45 nm soi cmos. IEEE J. Solid State Circuits 49, 1148–1157 (2014)
Z.-M. Tsai, Y.-H. Hsiao, H.-C. Liao, H. Wang, A 90-GHz power amplifier with 18-dbm output power and 26 GHz 3-db bandwidth in standard rf 65-nm cmos technology, in 2013 IEEE MTT-S International Microwave Symposium Digest (IMS), pp. 1–3, June 2013
J. Jayamon, A. Agah, B. Hanafi, H. Dabag, J. Buckwalter, P. Asbeck, A w-band stacked fet power amplifier with 17 dbm psat in 45-nm soi cmos, in 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), pp. 85–87, January 2013
Y. Zhao, J. Long, A wideband, dual-path, millimeter-wave power amplifier with 20 dbm output power and pae above 15 in 130 nm sige-bicmos. IEEE J. Solid State Circuits 47, 1981–1997 (2012)
U. Pfeiffer, D. Goren, A 23-dbm 60-GHz distributed active transformer in a silicon process technology. IEEE Trans. Microwave Theory Tech. 55, 857–865 (2007)
W. Tai, L. Carley, D. Ricketts, A 0.7w fully integrated 42GHz power amplifier with 10% pae in 0.13 um sige bicmos, in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 142–143, February 2013
D. Zhao, P. Reynaert, A 60-GHz dual-mode class ab power amplifier in 40-nm cmos. IEEE J. Solid State Circuits 48, 2323–2337 (2013)
A.-K. Chen, Y. Baeyens, Y.-K. Chen, J. Lin, An 83-GHz high-gain sige bicmos power amplifier using transmission-line current-combining technique. IEEE Trans. Microwave Theory Tech. 61, 1557–1569 (2013)
K.H. An, O. Lee, H. Kim, D.H. Lee, J. Han, K.S. Yang, Y. Kim, J.J. Chang, W. Woo, C.-H. Lee, H. Kim, J. Laskar, Power-combining transformer techniques for fully-integrated cmos power amplifiers. IEEE J. Solid State Circuits 43, 1064–1075 (2008)
B. Razavi, Design of millimeter-wave cmos radios: a tutorial. IEEE Trans. Circuits Syst. I Regul. Pap. 56, 4–16 (2009)
D. Zhao, P. Reynaert, 14.1 a 0.9v 20.9dbm 22.3%-pae e-band power amplifier with broadband parallel-series power combiner in 40nm cmos, in 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 248–249, February 2014
E. Kaymaksut, D. Zhao, P. Reynaert, E-band transformer-based doherty power amplifier in 40 nm cmos, in 2014 IEEE Radio Frequency Integrated Circuits Symposium, pp. 167–170, June 2014
K.-Y. Wang, T.-Y. Chang, C.-K. Wang, A 1v 19.3dbm 79GHz power amplifier in 65nm cmos, in 2012 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 260–262, February 2012
T.H. Lee, Planar Microwave Engineering: A Practical Guide to Theory, Measurement, and Circuits (Cambridge University Press, Cambridge, 2004)
E. Kaymaksut, CMOS transformer-based Doherty power amplifiers. KU Leuven Doctoral Dissertation, 2014
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2015 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Zhao, D., Reynaert, P. (2015). mm-Wave Broadband Power Amplifier Towards 20+dBm. In: CMOS 60-GHz and E-band Power Amplifiers and Transmitters. Analog Circuits and Signal Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-18839-3_7
Download citation
DOI: https://doi.org/10.1007/978-3-319-18839-3_7
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-18838-6
Online ISBN: 978-3-319-18839-3
eBook Packages: EngineeringEngineering (R0)