Abstract
Wafer thinning/handling is one of the most important technology to enable TSV. More than ten years, many researchers and engineers have made great efforts to establish the process.
In this chapter four technical articles are involved on the issues.
First, uniformity of wafer thichness is discussed. Thickness uniformity of temporary bonded wafer with glue is great issue for TSV manufacturing. A new technology named “Auto-TTV (total thickness variation)” compensates glue thickness distribution as flat as possible.
Second article presents novel via exposure technique. Copper via exposure during thinning process have many risks such as Cu via smear, wafer burn or wafer contamination by Cu. In this article, in-situ grit cleaning and rate-controlled polishing are discussed.
Third article deals with wafer bonding material and debonding process. Laser assisted debonding is expected to enable stable wafer handling process. Chemically and thermally stable glue is introduced.
Fourth article describes bonder and debonder for temporary bonding process. Key process and performance for temporary bonding is well summarized.
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Haimoto, T. et al. (2015). Wafer Handling and Thinning Processes. In: Kondo, K., Kada, M., Takahashi, K. (eds) Three-Dimensional Integration of Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-319-18675-7_4
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DOI: https://doi.org/10.1007/978-3-319-18675-7_4
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