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Silicon Nanowires: Fabrication and Applications

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Anisotropic Nanomaterials

Part of the book series: NanoScience and Technology ((NANO))

Abstract

Due to the high surface to volume silicon ratio and unique quasi one-dimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method is strongly linked to the target application. From an application point of view, electron devices based on silicon nanowires are a natural extension of the downscaling of a silicon metal insulator semiconductor transistor. However, the unique properties also allow implementing new device concepts like the junctionless transistor and new functionalities like reconfigurability on the device level. Sensor devices may benefit from the high surface to volume ratio leading to a very high sensitivity of the device. Also, solar cells and anodes in Li-ion batteries can be improved by exploiting the quasi one-dimensionality. This chapter will give a review on the state-of-the-art of silicon nanowire fabrication and their application in different types of devices.

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Acknowledgments

The authors want to thank the nanowire team at NaMLab, CfAED and the chairs of “Material Science and Nanotechnology” and “Nanoelectronic Materials” at TU Dresden for the work put into many of the results discussed in the chapter. Special thanks to Jens Trommer for helping with the editing of the chapter and the figures. This work was partly funded by “Deutsche Forschungsgemeinschaft (DFG)” in the framework of the project ReproNano (MI 1247/6-2) and the Cluster of Excellence ‘CfAED’.

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Authors and Affiliations

  1. NaMLab GmbH, Nöthnitzer Strasse 64, 01187, Dresden, Germany

    Thomas Mikolajick & Walter M. Weber

  2. Institute of Semiconductor and Microsystems, TU Dresden, Nöthnitzer Strasse 64, 01187, Dresden, Germany

    Thomas Mikolajick

  3. Center for Advancing Electronics Dresden (CfAED), TU Dresden, Nöthnitzer Strasse 64, 01062, Dresden, Germany

    Thomas Mikolajick & Walter M. Weber

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  1. Thomas Mikolajick
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  1. Liquid Crystal Institute, Kent State University, Kent, Ohio, USA

    Quan Li

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Mikolajick, T., Weber, W.M. (2015). Silicon Nanowires: Fabrication and Applications. In: Li, Q. (eds) Anisotropic Nanomaterials. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-18293-3_1

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