Abstract
This work was performed on a SiC sample grown on a 4H–SiC seed by chemical vapour deposition with the addition of GeH4 gas to the classical SiH4+C3H8 precursor system. In the present work, the defect structure and the polytypes “competition” are described. A complex 3C twinning system is also studied. This V-shape defect is nucleated inside the 3C layer contrary to what is generally observed (nucleation of twin at the 3C/4H interface). Using TEM diffraction, we identified the V-shape defect as a fourfold twin configuring three twin planes. Two of them are {111} twins, though the third one has been identified as a (11-5) twin.
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Acknowledgments
This work is financially supported by Marie Curie Actions under the project no 264613-NetFISiC. The authors are indebted to Dr G. Ferro and K. Alassad from UCBL 1 Lyon for having provided the studied sample.
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Sall, M., Chandran, N., Terzidou, A., Lioutas, C.B., Polychroniadis, E.K. (2015). TEM Characterization of a Complex Twinning System in 3C–SiC. In: Polychroniadis, E., Oral, A., Ozer, M. (eds) 2nd International Multidisciplinary Microscopy and Microanalysis Congress. Springer Proceedings in Physics, vol 164. Springer, Cham. https://doi.org/10.1007/978-3-319-16919-4_4
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DOI: https://doi.org/10.1007/978-3-319-16919-4_4
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