Abstract
Recrystallization of amorphous silicon is studied by classical molecular dynamics. First, a simulation scheme is developed to systematically determine the amorphous on crystal (a/c) silicon motion and compare it to established measurements by Olson and Roth [1]. As a result, it is shown that MD simulations using Tersoff [2] potential are adapted to simulate solid phase epitaxy, although a temperature shift to high values should be accounted for, while simulations using Stillinger-Weber [3] allows to study liquid phase epitaxy. In a second part, the simulation approach is applied to the case of a nanostructure [4] where classical recipes fail to achieve complete recrystallization. MD simulations are shown to be in agreement with experimental observations. The analysis of the structural evolution with time provide a support to understand the origin of the defects.
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Acknowledgments
The results presented in this chapter were obtained during a 5 years collaboration with Dr. Christophe Krzeminski. I acknowledge Pr. Fabrizio Cleri for the numerous discussions on the molecular dynamics technique and on the physics of recrystallization.
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Lampin, E. (2015). Recrystallization of Silicon by Classical Molecular Dynamics. In: Massobrio, C., Du, J., Bernasconi, M., Salmon, P. (eds) Molecular Dynamics Simulations of Disordered Materials. Springer Series in Materials Science, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-15675-0_6
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