Abstract
ZnS was grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. ZnS chemical stoichiometry was determined by energy-dispersive X-ray spectroscopy (EDS). The XRD analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal crystalline phase wurtzite type. The average crystallite size range of the film was from 8.15 to 31.95 nm, which was determined using the Scherrer–Debye equation on diffractograms. Besides, an experimental study on first- and second-order Raman scattering of ZnS films is made. The observed emission peaks in the room temperature photoluminescence spectra are associated at oxygen traps and interstitial sulphur.
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Díaz-Reyes, J., Castillo-Ojeda, R.S., Martínez-Juárez, J. (2015). Characterization of Wurtzite Type ZnS Grown by RF Magnetron Sputtering. In: Pérez Campos, R., Contreras Cuevas, A., Esparza Muñoz, R. (eds) Materials Characterization. Springer, Cham. https://doi.org/10.1007/978-3-319-15204-2_19
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DOI: https://doi.org/10.1007/978-3-319-15204-2_19
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