Abstract
The conducting quasi-two-dimensional electron system (q2DES) formed at the interface between LaAlO3 and SrTiO3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation of the q2DES is debated, new conducting interfaces have been discovered paving the way to possible applications in electronics, spintronics and optoelectronics. This chapter is an overview of the research on the LAO/STO system, presenting some of the most important results obtained in the last decade to clarify the mechanism of formation of the q2DES at the oxide interfaces and its peculiar electronic properties as compared to semiconducting 2D-electron gas.
Keywords
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Acknowledgments
The author is grateful to G. Ghiringhelli, F. Miletto Granozio, N. B. Brookes, J-M. Triscone, J. Mannhart, S. Gariglio, C. Piamonteze, X. Torrelles, S. Rusponi, D. Marrè and R. Felici for the fruitful discussion and continuous collaboration on the subject. We also acknowledge E. di Gennaro, A. Brinkman, M.P. Warusawithana and M. Sing for granting permission about reproduction of some figures and for exchange of ideas. This research was funded by the European Union FP7 Program MPNS COST Action MP1308-TO-BE and from the Italian MIUR FIRB project Grant no. RBAP115AYN.
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Salluzzo, M. (2015). Electronic Reconstruction at the Interface Between Band Insulating Oxides: The LaAlO3/SrTiO3 System. In: Mele, P., Endo, T., Arisawa, S., Li, C., Tsuchiya, T. (eds) Oxide Thin Films, Multilayers, and Nanocomposites. Springer, Cham. https://doi.org/10.1007/978-3-319-14478-8_10
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