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Defects at Oxide Surfaces pp 429–451Cite as

Photon-, Electron-, and Scanning Tunneling Microscopy-Induced Defects on Oxide Surfaces

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Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 58))

Abstract

This chapter is concerned with photon-, electron-, and scanning tunneling microscopy (STM)-induced defects on oxide surfaces. A number of case studies are described for each method of defect creation. The reactivity of these defects, usually oxygen vacancies, is also described. Photon-induced defects on CeO2(111) films are reviewed, as are those on rutile TiO2(110) and V2O5(001) and electron-induced defects on rutile TiO2(110), V2O3(001), CeO2(111) as well as anatase TiO2(101). The STM has been used to create and modify point defects on rutile TiO2(110), anatase TiO2(101), and anatase TiO2(001) (1 × 4), and each of these are discussed.

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Acknowledgments

We are grateful to financial support from the EU COST Action CM1104, the European Research Council Advanced Grant ENERGYSURF, the Royal Society (U.K.), and Alexander von Humboldt Stiftung (Germany) and thank David Grinter for useful discussions.

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  1. Department of Chemistry and London Centre for Nanotechnology, University College London, London, WC1H 0AJ, UK

    Chi Lun Pang & Geoff Thornton

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  1. Paris Institute of Nanoscience, University Pierre and Marie Curie, Paris, France

    Jacques Jupille

  2. Department of Chemistry, University College London, London, United Kingdom

    Geoff Thornton

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Pang, C.L., Thornton, G. (2015). Photon-, Electron-, and Scanning Tunneling Microscopy-Induced Defects on Oxide Surfaces. In: Jupille, J., Thornton, G. (eds) Defects at Oxide Surfaces. Springer Series in Surface Sciences, vol 58. Springer, Cham. https://doi.org/10.1007/978-3-319-14367-5_14

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