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Resistive Switching in Oxides

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Defects at Oxide Surfaces

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 58))

Abstract

Resistive switching in oxides, the phenomenon whereby the resistance of samples of the matrix can be cycled between states with contrasts of up to several orders of magnitude, has received growing attention over the past decade thanks to the possibility of exploiting this effect in novel memory technologies. Here we summarise the current state of the art in the field, paying particular attention to the underlying mechanisms of switching, which involves the creation of defects in the oxide. We also describe potential technological applications.

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  1. Department of Electronic & Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK

    A. Mehonic & A. J. Kenyon

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  1. A. Mehonic
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  1. Paris Institute of Nanoscience, University Pierre and Marie Curie, Paris, France

    Jacques Jupille

  2. Department of Chemistry, University College London, London, United Kingdom

    Geoff Thornton

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Mehonic, A., Kenyon, A.J. (2015). Resistive Switching in Oxides. In: Jupille, J., Thornton, G. (eds) Defects at Oxide Surfaces. Springer Series in Surface Sciences, vol 58. Springer, Cham. https://doi.org/10.1007/978-3-319-14367-5_13

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