Abstract
The goal of this chapter is to model a deposition process and then to compare simulation results with experimental data. With this comparison, a link can be established between model prediction and coating performance. Simulation of vacuum processes and in particular thin-film deposition processes is beneficial for the following reasons: (i) to aid decision making concerning purchase of equipment, (ii) scheduling and allocation of resources for equipment maintenance, and (iii) a quantitative evaluation of product and materials that may have been altered during a process aberration. The first and second of these have been explored extensively over the years. Indeed, production managers and process engineers have developed elaborate tools for cost projection and resources requirements based on customer demand and raw material availability. Many of these tools may be run in Microsoft Excel which further enhances their usefulness, and many are based on a run-to-run comparison philosophy.
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Abbreviations
- dN/dt :
-
Atomic evaporation rate
- V sp :
-
Atomic volume associated with sputter yield
- L :
-
Coil inductance
- R l :
-
Coil resistance
- q :
-
Current charge
- b :
-
Damping coefficient of conductance valve model
- m :
-
Element mass
- σ i :
-
Ion collision cross-section coefficient
- J :
-
Ion current density
- n i :
-
Ion density
- \( {\overline{u}}_i \) :
-
Ion group velocity
- λ i :
-
Ion mean-free path
- Ω t,i :
-
Kinetic energy of target atoms and incident ions
- G :
-
Linear system plant model
- J l :
-
Mass moment of inertia of conductance valve
- T d :
-
PID controller derivative time
- K c :
-
PID controller gain
- T i :
-
PID controller integral time
- K p :
-
Plant gain for thickness monitor plant model
- Ï„ :
-
Plant model time constant
- n g :
-
Plasma gas density
- s :
-
Plasma sheath thickness
- R sp :
-
Sputter removal rate
- Y sp :
-
Sputter yield
- L d :
-
System dead time
- p ∗ :
-
Vapor pressure of liquid silver
- φ :
-
View factor for evaporation rate
- K mx K f :
-
Gas flow inlet system calibration factors
- Q in Q out :
-
Gas flow rate in sccm
- BN:
-
Boron nitride
- DoE:
-
Design of experiments
- LQR:
-
Linear quadratic regulator
- PID:
-
Proportional–integral–derivative
- RGA:
-
Residual gas analysis
- Sccm:
-
Standard cubic centimeters per minute
- TiC:
-
Titanium carbide
- TiN:
-
Titanium nitride
- HV-RCF:
-
High-vacuum rolling contact fatigue
- W:
-
Watts unit of power
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Danyluk, M., Dhingra, A. (2015). Ion-Plating Process Model. In: Rolling Contact Fatigue in a Vacuum. Springer, Cham. https://doi.org/10.1007/978-3-319-11930-4_6
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DOI: https://doi.org/10.1007/978-3-319-11930-4_6
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