Abstract
Triple Material (TM) Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this paper. A lightly doped channel has been taken to enhance the device performance and reduce short channel effects (SCEs) such as drain induced barrier lowering (DIBL), sub threshold slope (SS), hot carrier effects (HCEs), channel length modulation (CLM). We investigated the parameters like Surface Potential, Electric field in the channel, SS, DIBL, Transconductance (gm ) for TM-GS-DG and compared with Single Material (SM) DG and TM-DG. The simulation and parameter extraction have been done by using the commercially available device simulation software ATLASTM.
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References
Das Gupta, A.: Multiple Gate MOSFETs: The Road to the future (2007)
Goel, K., Saxena, M., Gupta, M., Gupta, R.S.: Modeling and Simulation of a Nanoscale Three-Region Tri-Material Gate Stack (TRIMGAS) MOSFET for Improved Carrier Transport Efficiency and Reduced Hot-Electron Effects. IEEE Transaction on Electron Devices 53(7) (July 2006)
Razavi, P., Orouji, A.A.: Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects. In: International Conference on Advances in Electronics and Micro-Electronics, pp. 11–14 (2008)
Tiwari, P.K., Dubey, S., Singh, M., Jit, S.: A two-dimensional analytical model threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect-transistors. Journal of Applied Physics 108, 074508 (2010)
Chen, M.-L., Lin, W.-K., Chen, S.-F.: A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal-Oxide-Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics 48, 104–503 (2009)
Chaudhry, Kumar, M.J.: Controlling short-channel effects in deep submicron SOI MOSFETs for improved reliability: A review. IEEE Trans. Device Mater. Rel. 4(1), 99–109 (2004)
Nguyen, B.-Y., Celler, G., Mazuré, C.: A Review of SOI Technology and its Applications. 01-Nguyen-v4n2-AF 19.08.09 19:28, pp. 51–54
Young, K.K.: Short-channel effect in fully depleted SOI MOSFETs. IEEE Trans. Electron Devices 36(2), 399–402 (1989)
Gupta, S.K., Baidya, A., Baishya, S.: Simulation and Optimization of Lightly-Doped Ultra-Thin Triple Metal Double Gate (TM-DG) MOSFET with High-K Dielectric for Diminished Short Channel Effects. In: International Conference on Computer & Communication Technology, pp. 221–224 (2011)
Wong, B.P., Mittal, A., Cao, Y., Starr, G.: Nano-CMOS Circuit and Physical Design. A John Willy &Sons, INC. Publication (2005)
Dusastre, V., Heber, J., Pulizzi, F., Stoddart, A., Pamies, P., Martin, C.: The Interface is Still the Device. Nature Materials 11, 91 (2012)
Kasturi, P., Saxena, M., Gupta, M., Gupta, R.S.: Dual-Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part II: Impact of Gate-Dielectric Material Engineering. IEEE Transactions on Electron Devices 55(1) (January 2008)
DevicesimulatorATLAS usermanual. Silvaco Int., SantaClara, CA (May 2006), http://silvaco.com
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© 2014 ICST Institute for Computer Science, Social Informatics and Telecommunications Engineering
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Mohapatra, S.K., Pradhan, K.P., Sahu, P.K. (2014). A New Nanoscale DG MOSFET Design with Enhanced Performance – A Comparative Study. In: Das, V.V., Elkafrawy, P. (eds) Signal Processing and Information Technology. SPIT 2012. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 117. Springer, Cham. https://doi.org/10.1007/978-3-319-11629-7_11
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DOI: https://doi.org/10.1007/978-3-319-11629-7_11
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