The EP from QWs, NWs and QBs of HD Optoelectronic Materials

Part of the Springer Tracts in Modern Physics book series (STMP, volume 262)


This chapter explores the EP from QW, NW and QB of HD optoelectronic materials. The EP from the said structures changes with degeneracy, wave length, nano thickness and intensity in different manners which are totally band structure dependent. This chapter contains 43 open research problems.


Open Research Problem Nanothickness Unperturbed Carrier Energy Spectra Quantizing Magnetic Field Size Quantum Number 
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  1. 1.
    K. P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and their nanostructures. Springer Series in Materials Science, vol. 116 (Springer, Germany, 2008) (and the references cited therein)Google Scholar

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© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Electronics and Communication EngineeringNational Institute of TechnologyAgartalaIndia

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