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The EP from QWs, NWs and QBs of HD Optoelectronic Materials

Chapter
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Part of the Springer Tracts in Modern Physics book series (STMP, volume 262)

Abstract

This chapter explores the EP from QW, NW and QB of HD optoelectronic materials. The EP from the said structures changes with degeneracy, wave length, nano thickness and intensity in different manners which are totally band structure dependent. This chapter contains 43 open research problems.

Keywords

Open Research Problem Nanothickness Unperturbed Carrier Energy Spectra Quantizing Magnetic Field Size Quantum Number 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Reference

  1. 1.
    K. P. Ghatak, S. Bhattacharya, D. De, Einstein Relation in Compound Semiconductors and their nanostructures. Springer Series in Materials Science, vol. 116 (Springer, Germany, 2008) (and the references cited therein)Google Scholar

Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Electronics and Communication EngineeringNational Institute of TechnologyAgartalaIndia

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