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The EP from Quantum Box of Heavily Doped (HD) Non-parabolic Semiconductors

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Einstein's Photoemission

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 262))

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Abstract

This chapter explores the EP from QBs of HD nonlinear optical semiconductors based on a newly formulated electron dispersion relation considering all types of anisotropies of the energy band spectrum within the framework of k.p formalism in the presence of Gaussian band tails. We have also investigated the EP from QBs of HD III-V, II-VI, IV-VI, stressed Kane type semiconductors, Te, GaP, PtSb2, Bi2Te3, Ge and GaSb on the basis of newly derived respective E-k relation under heavy doping. We observe that the EP changes with increasing electron concentration and decreasing film thickness in different manners, which is the characteristic feature of such QB structures and the numerical values are totally band structure dependent. The EP increases with increasing photo energy in a step-like fashion for all the cases. The Sect. 3.4 contains 23 open research problems, which form the integral part of chapter one of this book.

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  1. Electronics and Communication Engineering, National Institute of Technology, Agartala, India

    Kamakhya Prasad Ghatak

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Ghatak, K.P. (2015). The EP from Quantum Box of Heavily Doped (HD) Non-parabolic Semiconductors. In: Einstein's Photoemission. Springer Tracts in Modern Physics, vol 262. Springer, Cham. https://doi.org/10.1007/978-3-319-11188-9_3

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