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Recovery from Hot Carrier Induced Degradation Through Temperature Treatment

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Book cover Hot Carrier Degradation in Semiconductor Devices

Abstract

We investigate the temperature accelerated recovery from hot carrier (HC) damage in nMOSFETs designed for power applications. These devices have a rather thick gate oxide and long channel which assures that mainly interface traps are created through the HC stress. We analyze the time and temperature dependence of the recovery of interface traps after HC stress using models from literature. The data is fairly consistent with the assumption of interfacial silicon dangling bonds which become passivated by molecular hydrogen. The passivation energy is found to be normally distributed due to the distribution of atomic defect configurations. The distribution parameters are independent of the overall degradation level which indicates that the passivation process is limited by the bond association kinetics rather than hydrogen supply. By comparing the recovery of HC degradation and bias temperature instability (BTI) we find that the quasi-permanent component of BTI is not the same as the one built up during HC stress and may possibly contain two types of defects.

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Acknowledgements

This chapter is mainly based on the references [6, 23, 30]. Stimulating discussions with Stanislav Tyaginov, Tibor Grasser (both TU Vienna), Michael Nelhiebel (KAI GmbH) and Thomas Aichinger (Infineon Technologies AG) are acknowledged. This work was jointly funded by the Austrian Research Promotion Agency (FFG, Project No. 831163) and the Carinthian Economic Promotion Fund (KWF, contract KWF-1521 | 22741 | 34186).

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  1. KAI Kompetenzzentrum für Automobil- und Industrielektronik, Europastraße 8, Villach, Austria

    Gregor Pobegen

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  1. Gregor Pobegen
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Correspondence to Gregor Pobegen .

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  1. Institute for Microelectronics, Vienna University of Technology, Wien, Austria

    Tibor Grasser

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Pobegen, G. (2015). Recovery from Hot Carrier Induced Degradation Through Temperature Treatment. In: Grasser, T. (eds) Hot Carrier Degradation in Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-08994-2_7

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  • DOI: https://doi.org/10.1007/978-3-319-08994-2_7

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-08993-5

  • Online ISBN: 978-3-319-08994-2

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