Skip to main content
SpringerLink
Log in

Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degradation Modeling by a Multiple-Carrier Degradation Process

  • Chapter
  • First Online:
Hot Carrier Degradation in Semiconductor Devices

Abstract

As the operating temperature increases, the tradeoff between performance and reliability becomes tricky as the classical hot-carrier (HC) picture has to be modified into the energy-driven formalism, taking into account the scattering mechanisms and thermal effects in ultrashort channel, which lead to current-driven damage in nanometer-scaled MOSFETs. This chapter focuses on the new requirements for advanced modeling of HC phenomena as a function of the scaled digital CMOS nodes. In the first part we recall the classical HC behavior in both N- and P-channel MOSFETs described by the lucky electron model (LEM) in thick (T ox ≥ 7 nm) to medium-range gate-oxide thickness T ox (3.2 nm ≤ T ox ≤ 5 nm), where charge detrapping is involved. Then we present the specificity of decananometer MOSFETs (T ox < 3.2 nm) using a unified energy-driven formalism between high carrier energy to high carrier density, as now cold-carrier (CC) damage results in a multiple-particle (MP) degradation process thermally activated under multivibration excitation of the passivated dangling bonds at the interface. Next, we finally develop a complete modeling for NMOS and PMOS devices that is transferred from DC accelerating damage to AC aging involved in logic cells using an Age(t s) function, for any pulse configurations, which are readily checked between experiments on digital cells at high temperature and the modeling. HC issues and temperature intricacy with bias temperature instability (BTI) are presented through some examples. Finally, we improve the CC modeling by defining a mixed-mode (MM) damage mechanism that lies between single-particle (SP) with high carrier energy processes and MP processes dominated by carrier density, including the progressive change from electron–electron scattering (EES) to multiple-interaction scheme until MP damage. This offers a complete comparison between 28-nm low-power (SiON) silicon bulk CMOS nodes and high-K metal gate (HfSiON) submitted to MP degradation process, with the interplay of thermal effects. It opens new perspectives for an accurate HC to CC reliability determination in actual and future nanoscale CMOS nodes.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 139.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. G. Baccarani, M.R. Wordeman, R.H. Dennard, IEEE Trans. Electron Devices 31, 452 (1984)

    Google Scholar 

  2. C. Fiegna, H. Iwai, T. Wada, M. Saito, E. Sangiorgi, B. Ricco, IEEE Trans. Electron Devices 41, 941 (1994)

    Google Scholar 

  3. T. Skotnicki, C. Fenouillet-Beranger, C. Gallon, F. Boeuf, S. Monfray, F. Payet, A. Pouydebasque, M. Szczap, A. Farcy, F. Arnaud, S. Clerc, M. Sellier, A. Cathignol, J.-P. Schoellkopf, E. Perea, R. Ferrant, H. Mingam, IEEE Trans. Electron Devices 55, 96 (2008)

    Google Scholar 

  4. G. Groeseneken, R. Degraeve, B. Kaczer, K. Martens, in Proceedings of the European Solid-State Device Research Conference (ESSDERC), vol 64 (2010)

    Google Scholar 

  5. T. Mizuno, S. Sawada, Y. Saitoh, T. Tanaka, IEEE Trans. Electron Devices 38, 584 (1991)

    Google Scholar 

  6. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, H. Iwai, IEEE Trans. Electron Devices 42, 1822 (1995)

    Google Scholar 

  7. A. Bravaix, Y. Mamy Randriamihaja, V. Huard, D. Angot, X. Federspiel, W. Arfaoui, P. Mora, F. Cacho, M. Saliva, C. Besset, S. Renard, D. Roy, E. Vincent, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 2D6 (2013)

    Google Scholar 

  8. J. Franco, B. Kaczer, G. Eneman, P.J. Roussel, M. Cho, J. Mitard, L. Witters, T.Y. Hoffmann, G. Groeseneken, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 624 (2011)

    Google Scholar 

  9. S. Ramey, A. Ashutosh, C. Auth, J. Clifford, M. Hattendorf, J. Hicks, R. James, A. Rahman, V. Sharma, A. St. Amour, C. Wiegand, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 4C.5.1 (2013)

    Google Scholar 

  10. K.F. Schuegraf, C. Hu, IEEE Trans. Electron Devices 41, 1227 (1994)

    Google Scholar 

  11. J.H. Stathis, D.J. DiMaria, in Proceedings of the International Electron Devices Meeting (IEDM), vol 167 (1998)

    Google Scholar 

  12. R. Degraeve, G. Groeseneken, R. Bellens, J.L. Ogier, M. Depas, P.J. Roussel, H.E.E. Maes, IEEE Trans. Electron Devices 45(904) (1998)

    Google Scholar 

  13. E.Y. Wu, J. Sune, Microelectron. Reliab. 45, 1809 (2005)

    Google Scholar 

  14. V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix, E. Vincent, Microelectron. Reliab. 45, 83 (2005)

    Google Scholar 

  15. T. Grasser, B. Kaczer, W. Goes, H. Reisinger, T. Aichinger, P. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel, IEEE Trans. Electron Devices 58, 3652 (2011)

    Google Scholar 

  16. D. Vuillaume, A. Bravaix, D. Goguenheim, Microelectron. Reliab. 38, 7 (1998)

    Google Scholar 

  17. C. Guérin, V. Huard, A. Bravaix, IEEE Trans. Device Mater. Reliab. 7, 225 (2007)

    Google Scholar 

  18. C. Hu, F.-C. Tam, P. Hsu, P.-K. Ko, T.-Y. Chan, K.W. Terrill, IEEE Trans. Electron Devices 32(375) (1985)

    Google Scholar 

  19. J.E. Chung, M.-C. Jeng, J.E. Moon, P.K. Ko, C. Hu, IEEE Trans. Electron Devices 37(1651) (1990)

    Google Scholar 

  20. S.E. Rauch, G. La Rosa, IEEE Trans. Device Mater. Reliab. 5, 701 (2005)

    Google Scholar 

  21. G. La Rosa, S.E. Rauch, Microelectron. Reliab. 47, 552 (2007)

    Google Scholar 

  22. S.E. Rauch, G. La Rosa, F.J. Guarin, IEEE Trans. Device Mater. Reliab. 1, 113 (2001)

    Google Scholar 

  23. K. Hess, I.C. Kizilyalli, J.W. Lyding, IEEE Trans. Electron Devices 45, 406 (1998)

    Google Scholar 

  24. K. Hess, L.F. Register, W. McMahon, B. Tuttle, O. Aktas, U. Ravaioli, J.W. Lyding, I.C. Kizilyalli, Phys. B Condens. Matter. 272, 527 (1999)

    Google Scholar 

  25. A. Haggag, W. McMahon, K. Hess, K. Cheng, J. Lee, J. Lyding, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 271 (2001)

    Google Scholar 

  26. K. Hess, A. Haggag, W. McMahon, K. Cheng, L. Lee, J. Lyding, Circuit Dev. Mag. 17, 33 (2001)

    Google Scholar 

  27. A. Haggag, M. Lemanski, G. Anderson, P. Abramovitz, M. Moosa, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 93 (2007)

    Google Scholar 

  28. S. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.-M. Park, T. Grasser, in Proceedings of the European Solid-State Device Research Conference (ESSDERC), vol 151 (2011)

    Google Scholar 

  29. S. Tyaginov, T. Grasser, in Proceedings of the International Integrated Reliability Workshop, vol 206 (2012)

    Google Scholar 

  30. MiniMOS-NT Device and Circuit Simulator, Institute for Microelectronics, Technische Universität Wien, Austria

    Google Scholar 

  31. S.E. Tyaginov, I.A. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser, Microelectron. Reliab. 50, 1267 (2010)

    Google Scholar 

  32. V. Huard, C.R. Parthasarathy, A. Bravaix, C. Guerin, E. Pion, in Proceedings of the International Reliability Physics Symposium (IRPS), vol. 624 (2009)

    Google Scholar 

  33. A. Bravaix, C. Guérin, V. Huard, D. Roy, J.-M. Roux, E. Vincent, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 531 (2009)

    Google Scholar 

  34. V. Huard, F. Cacho, Y.M. Randriamihaja, A. Bravaix, Microelectron. Eng. 88, 1396 (2011)

    Google Scholar 

  35. C. Guérin, V. Huard, A. Bravaix, J. Appl. Phys. 105, 114513 (2009)

    Google Scholar 

  36. C. Guérin, V. Huard, M. Denais, A. Bravaix, in Proceedings of the IEEE International Integrated Reliability Workshop, vol 63 (2005)

    Google Scholar 

  37. W. McMahon, K. Matsuda, J. Lee, K. Hess, J. Lyding, Model. Simulat. Microsyst. 1, 576 (2002)

    Google Scholar 

  38. D. Vuillaume, J.C. Marchetaux, P.E. Lippens, A. Bravaix, A. Boudou, IEEE Trans. Electron Devices 40, 773 (1993)

    Google Scholar 

  39. A. Bravaix, D. Vuillaume, Solid-State Electron. 41, 1293 (1997)

    Google Scholar 

  40. A. Bravaix, in Proceedings of the IEEE International Integrated Reliability Workshop (IIRW), Tutorial, vol 174 (1999)

    Google Scholar 

  41. E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken, IEEE Trans. Device Mater. Reliab. 9, 454 (2009)

    Google Scholar 

  42. G.A. Baraff, Phys. Rev. 128, 2507 (1962)

    MATH  Google Scholar 

  43. J.L. Moll, R. Van Ovestraeten, Solid-State Electron. 6, 147 (1963)

    Google Scholar 

  44. K. Hess, Solid-State Electron. 21, 123 (1978)

    Google Scholar 

  45. B.K. Riley, J. Phys. C: Solid State Phys. 16, 3373 (1983)

    Google Scholar 

  46. S. Tam, P.-K. Ko, C. Hu, IEEE Trans. Electron Devices 31(1116) (1984)

    Google Scholar 

  47. A. Bravaix, D. Goguenheim, E. Vincent, N. Revil, Microelectron. Eng. 48, 163 (1999)

    Google Scholar 

  48. E. Takeda, H. Kume, S. Asai, IEEE J. Solid-State Circuits 17, 241 (1982)

    Google Scholar 

  49. K. Hofmann, C. Werner, W. Weber, G. Dorda, IEEE Trans. Electron Devices 32, 691 (1985)

    Google Scholar 

  50. T.-Y. Huang, W.W. Yao, R.A. Martin, A.G. Lewis, M. Koyanagi, J.Y. Chen, in Proceedings of the International Electron Devices Meeting (IEDM), vol 742 (1986)

    Google Scholar 

  51. T. Buti, S. Ogura, N. Rovedo, K. Tobimatsu, IEEE Trans. Electron Devices 38, 1757 (1991)

    Google Scholar 

  52. T. Hori, J. Hirase, Y. Odake, T. Yasui, IEEE Trans. Electron Devices 39, 2312 (1992)

    Google Scholar 

  53. P. Heremans, R. Bellens, G. Groeseneken, H.E. Maes, IEEE Trans. Electron Devices 35, 2194 (1988)

    Google Scholar 

  54. P. Heremans, J. Witters, G. Groeseneken, H.E. Maes, IEEE Trans. Electron Devices 36, 1318 (1989)

    Google Scholar 

  55. B.S. Doyle, M. Bourcerie, J.-C. Marchetaux, A. Boudou, IEEE Electron Device Lett. 11, 237 (1990)

    Google Scholar 

  56. B.S. Doyle, M. Bourcerie, C. Bergonzoni, R. Benechi, A. Bravaix, K.R. Mistry, A. Boudou, IEEE Trans. Electron Devices 37, 1869 (1990)

    Google Scholar 

  57. K.R. Mistry, B.S. Doyle, IEEE Electron Device Lett. 11, 267 (1990)

    Google Scholar 

  58. K.R. Mistry, B.S. Doyle, IEEE Trans. Electron Devices 40, 96 (1993)

    Google Scholar 

  59. P. Heremans, R. Bellens, G. Groeseneken, H.E. Maes, B.S. Doyle, M. Bourcerie, C. Bergonzoni, R. Benechi, A. Bravaix, K.R. Mistry, A. Boudou, IEEE Trans. Electron Devices 39, 458 (1992). comment and reply

    Google Scholar 

  60. K.R. Mistry, T.F. Fox, R.P. Preston, N.D. Arora, B.S. Doyle, D.E. Nelsen, IEEE Trans. Electron Devices 40, 1284 (1992)

    Google Scholar 

  61. J.E. Chung, P.K. Ko, C. Hu, IEEE Trans. Electron Devices 38, 1362 (1991)

    Google Scholar 

  62. J.S. Goo, Y.-G. Kim, H.L. Yee, H. Kwon, H. Shin, Solid-State Electron. 38, 1191 (1995)

    Google Scholar 

  63. R. Dreesen, K. Croes, J. Manca, W. De Ceuninck, L. De Schepper, A. Pergoot, G.Groeseneken, in Proceedings of the European Solid-State Device Research Conference (ESSDERC), vol 584 (1999)

    Google Scholar 

  64. M.K. Orlowski, C. Werner, IEEE Trans. Electron Devices 36, 382 (1989)

    Google Scholar 

  65. T. Kaga, T. Hagiwara, IEEE Trans. Electron Devices 35, 929 (1988)

    Google Scholar 

  66. T. Hori, T. Yasui, S. Akamatsu, IEEE Trans. Electron Devices 39, 134 (1992)

    Google Scholar 

  67. P. Balk, Solid State Devices Inst. Phys. Ser. 69, 63 (1983)

    Google Scholar 

  68. B.S. Doyle, G.J. Dunn, IEEE Electron Device Lett. 13, 38 (1992)

    Google Scholar 

  69. C.T. Sah, J.Y.C. Sun, J.J. Tzou, J. Appl. Phys. 54, 944 (1983)

    Google Scholar 

  70. A. Bravaix, D. Goguenheim, N. Revil, E. Vincent, Microelectron. Reliab. 44, 65 (2004)

    Google Scholar 

  71. J.J. Tzou, C.C. Yao, R. Cheung, H.W.K. Chan, IEEE Electron Device Lett. 7, 5 (1986)

    Google Scholar 

  72. Q. Wang, M. Brox, W.H. Krautschneider, W. Weber, IEEE Electron Device Lett. 5, 218 (1991)

    Google Scholar 

  73. A. Bravaix, D. Vuillaume, in Proc. European Solid-State Device Research Conference (ESSDERC), vol 469 (1992)

    Google Scholar 

  74. M. Brox, A. Schwerin, Q. Wang, W. Weber, IEEE Trans. Electron Devices 41, 1184 (1994)

    Google Scholar 

  75. M. Koyanagi, A.G. Lewis, J. Zhu, R.A. Martin, T.Y. Huang, J.Y. Chen, in Proceedings of the International Electron Devices Meeting (IEDM), vol 722 (1986)

    Google Scholar 

  76. E. Rosenbaum, R. Rofan, C. Hu, IEEE Electron Device Lett. 12, 599 (1991)

    Google Scholar 

  77. A. Bravaix, tutorials in Proceedings of the International Reliability Physics Symposium (IRPS), vol 531 (2011)

    Google Scholar 

  78. A. Bravaix, D. Vuillaume, IEEE Trans. Electron Devices 42, 101 (1995)

    Google Scholar 

  79. G. Groeseneken, R. Bellens, G. Van den Bosch, H.E. Maes, Semicond. Sci. Technol. 10, 1208 (1995)

    Google Scholar 

  80. A. Bravaix, D. Vuillaume, D. Goguenheim, V. Lasserre, M. Haond, in Proceedings of the International Electron Devices Meeting (IEDM), vol 873 (1996)

    Google Scholar 

  81. R. Woltjer, G.M. Paulzen, H.G. Pomp, H. Lifka, P.H. Woerlee, IEEE Trans. Electron Devices 42, 109 (1995)

    Google Scholar 

  82. Y. Nissan-Cohen, J. Shappir, D. Frohmann-Bentchkowsky, J. Appl. Phys. 60, 2024 (1985)

    Google Scholar 

  83. M. Brox, W. Weber, IEEE Trans. Electron Devices 38, 1852 (1991)

    Google Scholar 

  84. V. Misra, W.K. Henson, E.M. Vogel, G.A. Hames, P.K. McLarthy, IEEE Trans. Electron Devices 43, 636 (1996)

    Google Scholar 

  85. H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S.I. Nakamura, M. Saito, H. Iwai, IEEE Trans. Electron Devices 43, 1233 (1996)

    Google Scholar 

  86. W.C. Lee, C. Hu, IEEE Trans. Electron Devices 48, 1366 (2001)

    Google Scholar 

  87. D.M. Fleetwood, IEEE Trans. Nuclear Sci. 39, 269 (1992)

    Google Scholar 

  88. C.R. Parthasarathy, M. Denais, V. Huard, G. Ribes, E. Vincent, A. Bravaix, IEEE Trans. Device Mater. Reliab. 7, 130 (2007)

    Google Scholar 

  89. A. Bravaix, D. Goguenheim, V. Huard, M. Denais, C. Parthasarathy, F. Perrier, N. Revil, E. Vincent, Microelectron. Reliab. 45, 1370 (2005)

    Google Scholar 

  90. B.S. Doyle, M. Bourcerie, J.C. Marchetaux, A. Boudou, Electron Device Lett. 8, 234 (1987)

    Google Scholar 

  91. T.C. Ong, M. Levi, P.K. Ko, C. Hu, IEEE Trans. Electron Devices 35, 978 (1988)

    Google Scholar 

  92. M. Bourcerie, B.S. Doyle, J.C. Marchetaux, C. Soret, A. Boudou, IEEE Trans. Electron Devices 37, 708 (1990)

    Google Scholar 

  93. D. Vuillaume, A. Bravaix, J. Appl. Phys. 73, 2559 (1993)

    Google Scholar 

  94. C.R. Parthasarathy, M. Denais, V. Huard, C. Guerin, G. Ribes, E. Vincent, A. Bravaix, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 696 (2007)

    Google Scholar 

  95. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, N. Revil, in Proceedings of the International Electron Devices Meeting (IEDM), vol 109 (2004)

    Google Scholar 

  96. T.C. Shen, C. Wang, G.C. Abeln, J.R. Tucker, J.W. Lyding, P. Avouris, R.E. Walkup, Science 268, 1590 (1995)

    Google Scholar 

  97. P. Avouris, R.E. Walkup, A.R. Rossi, T.-C. Shen, G.C. Abeln, J.R. Tucker, J.W. Lyding, Chem. Phys. Lett. 257, 148 (1996)

    Google Scholar 

  98. Y. Kamakura, H. Mizuno, M. Yamaji, M. Morifuji, K. Taniguchi, C. Hamaguchi, T. Kunikiyo, M. Takenaka, J. Appl. Phys. 75, 3500 (1994)

    Google Scholar 

  99. K. Hess, B. Tuttle, F. Register, D.K. Ferry, Appl. Phys. Lett. 75, 3147 (1999)

    Google Scholar 

  100. C. Guérin, V. Huard, A. Bravaix, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 692 (2007)

    Google Scholar 

  101. E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken, IEEE Trans. Device Mater. Reliab. 11, 92 (2011)

    Google Scholar 

  102. A. Bravaix, C. Guérin, D. Goguenheim, V. Huard, D. Roy, C. Besset, S. Renard, Y. Mamy Randriamihaja, E. Vincent, in Proceedings of the International Reliability Physics Symposium (IRPS), vol 55 (2010)

    Google Scholar 

  103. M.V. Fischetti, Phys. Rev. B 31, 2099 (1985)

    Google Scholar 

  104. D.J. Maria, J.H. Stathis, J. Appl. Phys. 89, 5015 (2001)

    Google Scholar 

  105. P.A. Childs, C.C.C. Leung, J. Appl. Phys. 79, 222 (1996)

    Google Scholar 

  106. S.T. Pantelides, S.N. Rashkeev, R. Buczko, D.M. Fleetwood, R.D. Schrimpf, IEEE Trans. Nucl. Sci. 47, 2262 (2000)

    Google Scholar 

  107. V. Huard, M. Denais, C. Parthasarathy, Microelectron. Reliab. 46, 1 (2006)

    Google Scholar 

  108. F.-C. Hsu, K.-Y. Chiu, IEEE Electron Device Lett. 5, 148 (1984)

    Google Scholar 

  109. P. Heremans, G.V.D. Bosch, R. Bellens, G. Groeseneken, H.E. Maes, IEEE Trans. Electron Devices 37, 980 (1990)

    Google Scholar 

  110. B. Ricco, E. Sangiorgi, D. Cantarelli, in Proceedings of the International Electron Devices Meeting (IEDM), vol 92 (1984)

    Google Scholar 

  111. E. Sangiorgi, B. Ricco, P. Olivo, Electron Device Lett. 6, 513 (1985)

    Google Scholar 

  112. J.D. Bude, in Symposium of VLSI Technology Digest, vol 101 (1995)

    Google Scholar 

  113. J.D. Bude, T. Iizuka, Y. Kamakura, in Proceedings of the International Electron Devices Meeting (IEDM), vol 865 (1996)

    Google Scholar 

  114. D.R. Young, E.A. Irene, D.J. Di Maria, R.F. De Keersmacker, H.Z. Massoud, J. Appl. Phys. 50, 6366 (1979)

    Google Scholar 

  115. Y. Nishi, J. Appl. Phys. 10, 52 (1971)

    Google Scholar 

  116. E.H. Poindexter, P.J. Caplan, B.E. Deal, R.R. Razouk, J. Appl. Phys. 52, 879 (1981)

    Google Scholar 

  117. E.H. Poindexter, P.J. Caplan, Prog. Surf. Sci. 14, 201 (1983)

    Google Scholar 

  118. D. Goguenheim, D. Vuillaume, D. Vincent, N.M. Johnson, J. Appl. Phys. 68, 1104 (1990)

    Google Scholar 

  119. G.J. Gerardi, E.H. Poindexter, P.J. Caplan, N.M. Johnson, Appl. Phys. Lett. 49, 348 (1986)

    Google Scholar 

  120. N.M. Johnson, D.K. Biegelsen, M.D. Moyer, S.T. Chang, E.H. Poindexter, P.J. Caplan, Appl. Phys. Lett. 43, 563 (1983)

    Google Scholar 

  121. D. Vuillaume, D. Goguenheim, G. Vincent, Appl. Phys. Lett. 57, 1206 (1990)

    Google Scholar 

  122. J.P. Campbell, P.M. Lenahan, Appl. Phys. Lett. 80, 1945 (2002)

    Google Scholar 

  123. W.L. Warren, P.M. Lenahan, Phys. Rev. B Condens. Matter 42, 1773 (1990)

    Google Scholar 

  124. J.P. Campbell, P.M. Lenahan, C.J. Cochrane, A.T. Krishnan, S. Krishnan, IEEE Trans. Device Mater. Reliab. 7, 540 (2007)

    Google Scholar 

  125. A. Bravaix., V. Huard, G. Goguenheim, E. Vincent, in Proceedings of the International Electron Devices Meeting (IEDM), vol 622 (2011)

    Google Scholar 

  126. W. Mc Mahon, K. Matsuda, J. Lee, K. Hess, J. Lyding, Model. Simulat. Microsyst. vol 576 (2002)

    Google Scholar 

  127. J. Sune, E.Y. Wu, Phys. Rev. Lett. 92, 87601 (2004)

    Google Scholar 

  128. G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo, Microelectron. Reliab. 45, 1842 (2005)

    Google Scholar 

  129. B.N.J. Persson, P. Avouris, Surf. Sci. 390, 45 (1997)

    Google Scholar 

  130. B. Tuttle, C.G. Van de Walle, Phys. Rev. B 59, 2631 (1999)

    Google Scholar 

  131. C. Kaneta, T. Yamasaki, Y. Kosaka, Fujitsu Sci. Technol. J. 39, 106 (2003)

    Google Scholar 

  132. R. Biswas, Y.-P. Li, B.C. Pan, Appl. Phys. Lett. 72, 3500 (1998)

    Google Scholar 

  133. K. Stokbro, C. Thirstrup, M. Sakurai, U. Quaade, B.Y.-K. Hu, F. Perez-Murano, F. Grey, Phys. Rev. Lett. 80, 2618 (1998)

    Google Scholar 

  134. H. Ueba, B.N.J. Persson, Surf. Sci. 566–568, 1 (2004)

    Google Scholar 

  135. E. Cartier, D.A. Buchanan, J.H. Stathis, D.J. Di Maria, J. Non-Crystal. Solid 187(244) (1995)

    Google Scholar 

  136. B. Tuttle, Phys. Rev. B 61, 4417 (2000)

    Google Scholar 

  137. R. Bellens, G. Groeseneken, P. Heremans, H.E. Maes, IEEE Trans. Electron Devices 41, 1421 (1994)

    Google Scholar 

  138. K.N. Quader, P. Feng, J.T. Yue, P.K. Ko, C. Hu, IEEE Trans. Electron Devices 41, 681 (1994)

    Google Scholar 

  139. C. Guérin, V. Huard, C. Parthasarathy, J.-M. Roux, A. Bravaix, E. Vincent, Proceedings of the International Reliability Physics Symposium (IRPS), vol 741 (2008)

    Google Scholar 

  140. V. Huard, C.R. Parthasarathy, A. Bravaix, T. Hugel, C. Guérin, E. Vincent, IEEE Trans. Device Mater. Reliab. 7, 558 (2007)

    Google Scholar 

  141. H. Ueba, S.G. Tikhodeev, B.N.J. Persson, Inelastic Tunneling Current-Driven Motions of Single Adsorbates, in Current-Driven Phenomena in Microelectronics (T. Seideman, ed.) (Pan Standford Publishing, Singapore, 2011), p. 26

    Google Scholar 

  142. G. Lüpke, N.H. Tolk, L.C. Feldman, J. Appl. Phys. 93, 2317 (2003)

    Google Scholar 

  143. Y. Mamy Randriamihaja, V. Huard, X. Federspiel, A. Zaka, P. Palestri, D. Rideau, D. Roy, A. Bravaix, Microelectron. Reliab. 52, 2513 (2012)

    Google Scholar 

  144. Y. Mamy Randriamihaja, X. Federspiel, V. Huard, A. Bravaix, in Proceedings of the International Reliability Physics Symposium (IRPS), vol XT1 (2013)

    Google Scholar 

  145. J. Franco, B. Kaczer, M. Toledano-Luque, P.J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken, IEEE Trans. Electron Devices 60, 405 (2013)

    Google Scholar 

  146. J. Franco, B. Kaczer, X.Y.Z. This book.

    Google Scholar 

  147. S.E. Rauch, F. Guarin, G. La Rosa, IEEE Trans. Device Mater. Reliab. 10, 40 (2010)

    Google Scholar 

Download references

Acknowledgments

This work has been possible thanks to the support of STMicroelectronics Crolles and particularly the help of E. Vincent, whose skills on various reliability fields have enabled us to stay involved and go further. A. Bravaix wants to give special thanks to the fruitful work of all his present and former PhD students he has supervised, and for the pleasure he has had in helping them on the road of circuit reliability, sharing their enthusiasm to improve methodologies, theoretical backgrounds, modeling, and experimental techniques, with youthful eyes that will see further than we will.

Author information

Authors and Affiliations

  1. ISEN, REER-IM2NP, Maison des Technologies, 83000, Toulon, France

    Alain Bravaix

  2. ST Microelectronics, REER, 850 rue J. Monnet, 38356, Crolles, France

    Vincent Huard, Florian Cacho, Xavier Federspiel & David Roy

Authors
  1. Alain Bravaix
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Vincent Huard
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Florian Cacho
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Xavier Federspiel
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. David Roy
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Alain Bravaix .

Editor information

Editors and Affiliations

  1. Institute for Microelectronics, Vienna University of Technology, Wien, Austria

    Tibor Grasser

Rights and permissions

Reprints and permissions

Copyright information

© 2015 Springer International Publishing Switzerland

About this chapter

Cite this chapter

Bravaix, A., Huard, V., Cacho, F., Federspiel, X., Roy, D. (2015). Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degradation Modeling by a Multiple-Carrier Degradation Process. In: Grasser, T. (eds) Hot Carrier Degradation in Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-08994-2_3

Download citation

  • DOI: https://doi.org/10.1007/978-3-319-08994-2_3

  • Published:

  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-08993-5

  • Online ISBN: 978-3-319-08994-2

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics

Search

Navigation