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Hot Carrier Degradation in Semiconductor Devices pp 3–27Cite as

From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation

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Abstract

The increase in CMOS hot carrier lifetime due to Deuterium anneals motivates a straightforward physical picture for hot carrier degradation. The various possible isotope effects provide context for a discussion of some qualitative aspects of the physics. Typical industry DC hot carrier stress models and their application to AC circuit models are described and motivated in that context.

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Authors and Affiliations

  1. GlobalFoundries, 400 Stone Break Rd., Malta, NY, USA

    William McMahon, Yoann Mamy-Randriamihaja, Balaji Vaidyanathan, Tanya Nigam & Ninad Pimparkar

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  1. William McMahon
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  3. Balaji Vaidyanathan
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  4. Tanya Nigam
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Correspondence to William McMahon .

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Editors and Affiliations

  1. Institute for Microelectronics, Vienna University of Technology, Wien, Austria

    Tibor Grasser

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McMahon, W., Mamy-Randriamihaja, Y., Vaidyanathan, B., Nigam, T., Pimparkar, N. (2015). From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation. In: Grasser, T. (eds) Hot Carrier Degradation in Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-08994-2_1

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  • DOI: https://doi.org/10.1007/978-3-319-08994-2_1

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