Abstract
A review of recent achievements in graphene-on-ferroelectric systems is presented. These systems have several unique features. Among them are: the possibility to obtain the high carrier concentration (~1012 cm−2) for the moderate gate voltages (of ~1 V) and the existence of hysteresis (or anti-hysteresis) in the dependence of the graphene channel resistance on the gate voltage. The use of ferroelectric substrates for graphene had enabled the construction of the robust elements of non-volatile memory of new generation. These elements operate for more than 105 switches and preserve information for more than 1000 s. Graphene-on-ferroelectric systems can be characterized theoretically by the ultrafast rate of switching (~10–100 fs). It was also demonstrated theoretically, that the effective, fast and small modulators of the middle- and near-IR radiation for different optoelectronic applications can be constructed on the base of graphene on the Pb(ZrxTi1−x)O3 ferroelectric substrate.
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This work was supported by State Fundamental Research Fund of Ukraine (Grant 53.2/006).
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Strikha, M.V. (2014). Non-volatile Memory of New Generation and Ultrafast IR Modulators Based on Graphene on Ferroelectric Substrate. In: Nazarov, A., Balestra, F., Kilchytska, V., Flandre, D. (eds) Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. Engineering Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-08804-4_9
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