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Perspectives of UTBB FD SOI MOSFETs for Analog and RF Applications

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Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Part of the book series: Engineering Materials ((ENG.MAT.))

Abstract

Ultra-thin body and buried oxide (UTBB) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs are widely recognized as a promising candidate for 20 nm technology node and beyond, due to outstanding electrostatic control of short channel effects (SCE). Introduction of a highly-doped layer underneath thin buried oxide (BOX), so called ground-plane (GP), targets suppression of detrimental parasitic substrate coupling and opens multi-threshold voltage (V Th ) and dynamic-V Th opportunities within the same process as well as the use of back-gate control schemes [1, 2]. Electrostatics, scalability and variability issues in UTBB MOSFETs as well as their perspectives for low power digital applications are widely discussed in the literature [1–5]. At the same time assessment of UTBB FD SOI for analog and RF applications received less attention. This chapter will discuss Figures of Merit (FoM) of UTBB MOSFETs of interest for further analog/RF applications summarizing our original research over the last years [6–15]. Device analog/RF performance is assessed through the key parameters such as the transconductance, g m , the output conductance, g d , the intrinsic gain, A v and the cut-off frequencies, f T and f max. Particular attention is paid to (1) a wide-frequency band assessment, the only approach that allows fair performance prediction for analog/RF applications; (2) the effect of parasitic elements, whose impact on the device performance increases enormously in deeply downscaled devices, in which they can even dominate device performance. Whenever possible, we will compare FoM achievable in UTBB FD SOI devices with those reported for other advanced devices.

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Acknowledgments

The work has been partly funded by the FNRS (Belgium), by the FP7 NoE ‘‘EuroSOI+’’ and by Catrene “Reaching 22” projects. The authors would like to thank Olivier Faynot, Thierry Poiroux and François Andrieu from CEA-Leti, MINATEC, Grenoble, France for the provided devices and valuable discussions as well as Pascal Simon from WELCOME characterization platform of Université catholique de Louvain, Louvain-la-Neuve, Belgium for his assistance with high-frequency measurements setup.

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Authors and Affiliations

  1. ICTEAM Institute, Université Catholique de Louvain, 1348, Louvain-la-Neuve, Belgium

    Valeriya Kilchytska, Sergej Makovejev, Jean-Pierre Raskin & Denis Flandre

  2. Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis, Malaysia

    Mohd Khairuddin Md Arshad

Authors
  1. Valeriya Kilchytska
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  2. Sergej Makovejev
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  3. Mohd Khairuddin Md Arshad
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  4. Jean-Pierre Raskin
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  5. Denis Flandre
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Corresponding author

Correspondence to Valeriya Kilchytska .

Editor information

Editors and Affiliations

  1. National Academy of Science of Ukraine, Lashkaryov Institute of Semiconductor Physics, Kyiv, Ukraine

    Alexei Nazarov

  2. Sinano InstituteIMEP-LAHC, CNRS Grenoble, IMEP-LAHC, Grenoble, France

    Francis Balestra

  3. ICTEAM Institute Microelectronics Laboratory, Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Valeriya Kilchytska

  4. ICTEAM Institute, ELEN (Electrical Engineering), Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

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Kilchytska, V., Makovejev, S., Md Arshad, M.K., Raskin, JP., Flandre, D. (2014). Perspectives of UTBB FD SOI MOSFETs for Analog and RF Applications. In: Nazarov, A., Balestra, F., Kilchytska, V., Flandre, D. (eds) Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. Engineering Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-08804-4_2

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