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Structural and Luminescent Properties of Carbonized Silicon Oxide Thin Layers

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Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Part of the book series: Engineering Materials ((ENG.MAT.))

Abstract

A critical review of structural and white light emission properties of carbonized silicon oxide thin layers (SiOC) is presented. Methods of synthesis of the SiOC layers, effects of thermal treatments, spectral properties and degradation of photoluminescence are analyzed. SiOC layers were synthesized by two methods: (1) magnetron deposition of a-SiC:H thin films on Si wafer followed by oxidation in flow oxygen or water vapor at temperature of 450–600 °C; (2) thermal treatment of porous silicon layer (grown on p-type Si wafer by anodization in HF/C2H5OH solution) in flow of acetylene (850–1050 °C) followed by oxidation in flow of water vapor (600–850 °C). Working hypothesis is that main contribution in broad band photoluminescence (400–700 nm) of the materials originates from carbon nano-clusters. Hence, original experimental data and other published data are discussed in frame of this working hypothesis.

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Authors and Affiliations

  1. Lashkaryov Institute of Semiconductor Physics, Pr, Nauki 41, Kyiv, 03028, Ukraine

    Andrii V. Vasin

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  1. Andrii V. Vasin
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Correspondence to Andrii V. Vasin .

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Editors and Affiliations

  1. National Academy of Science of Ukraine, Lashkaryov Institute of Semiconductor Physics, Kyiv, Ukraine

    Alexei Nazarov

  2. Sinano InstituteIMEP-LAHC, CNRS Grenoble, IMEP-LAHC, Grenoble, France

    Francis Balestra

  3. ICTEAM Institute Microelectronics Laboratory, Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Valeriya Kilchytska

  4. ICTEAM Institute, ELEN (Electrical Engineering), Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

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Vasin, A.V. (2014). Structural and Luminescent Properties of Carbonized Silicon Oxide Thin Layers. In: Nazarov, A., Balestra, F., Kilchytska, V., Flandre, D. (eds) Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. Engineering Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-08804-4_14

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