Abstract
Employing a mathematical model based upon Chua’s unfolding theorem, some aspects of the nonlinear dynamics of a thermally-activated micro-scale NbO x /Nb 2 O 5 volatile memristor were modeled. Insights into the peculiar behavior of the device are gained through experiments and model-based simulations. Particularly, this enables us to reproduce its threshold switching behavior under quasi-static excitation, and to explain under which conditions the off-to-on switching is accompanied by the appearance of a negative differential resistance region on its current-voltage characteristic.
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Slesazeck, S., Ascoli, A., Mähne, H., Tetzlaff, R., Mikolajick, T. (2014). Unfolding the Threshold Switching Behavior of a Memristor. In: Mladenov, V.M., Ivanov, P.C. (eds) Nonlinear Dynamics of Electronic Systems. NDES 2014. Communications in Computer and Information Science, vol 438. Springer, Cham. https://doi.org/10.1007/978-3-319-08672-9_20
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DOI: https://doi.org/10.1007/978-3-319-08672-9_20
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