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Appendix C: The ER in HDS and Their Nano-Structures Under Cross-Fields Configuration

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Heavily-Doped 2D-Quantized Structures and the Einstein Relation

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 260))

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Abstract

In this appendix, we study the ER under cross-field configuration in bulk specimens and ultra-thin films of HD non-linear optical, III-V, II-VI, IV-VI and stressed Kane type semiconductors on the basis of newly formulated E-k relation respectively. This appendix contains three open research problems

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Agartala, India

    Kamakhya Prasad Ghatak

  2. Department of Electrical and Communication Engineering, Indian Institute of Information Technology, Allahabad, India

    Sitangshu Bhattacharya

Authors
  1. Kamakhya Prasad Ghatak
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  2. Sitangshu Bhattacharya
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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2015). Appendix C: The ER in HDS and Their Nano-Structures Under Cross-Fields Configuration. In: Heavily-Doped 2D-Quantized Structures and the Einstein Relation. Springer Tracts in Modern Physics, vol 260. Springer, Cham. https://doi.org/10.1007/978-3-319-08380-3_8

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