Abstract
In this chapter, we study the ER in doping superlattices of HD non-linear optical, III-V, II-VI, IV-VI and stressed semiconductors on the basis of newly formulated electron statistics in each case. It has been observed that the ER increases with increasing surface electron concentration. In this simplified analysis we have investigated the ER in the electric quantum limit and the Sect. 2.4 contains 5 open research problems.
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Ghatak, K.P., Bhattacharya, S. (2015). The ER in Doping Super Lattices of HD Non-parabolic Semiconductors. In: Heavily-Doped 2D-Quantized Structures and the Einstein Relation. Springer Tracts in Modern Physics, vol 260. Springer, Cham. https://doi.org/10.1007/978-3-319-08380-3_2
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