Reliability of New SiC BJT Power Modules for Fully Electric Vehicles
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Wide-bandgap semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in electric vehicles due to their improved electrical and thermal properties in comparison to silicon based solutions.
In this paper, a novel SiC based power module will be introduced, which is going to be integrated into a currently developed drive-train system for electric commercial vehicles. Increased requirements with respect to robustness and lifetime are typical for this application field. Therefore, reliability aspects such as lifetime-limiting factors, reliability assessment strategies as well as possible derived optimization measures will be the main focus of the described work.
KeywordsElectric drive-train system power electronics silicon carbide doublesided cooling reliability
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