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Reliability of New SiC BJT Power Modules for Fully Electric Vehicles

  • Alexander OttoEmail author
  • Eberhard Kaulfersch
  • Klas Brinkfeldt
  • Klaus Neumaier
  • Olaf Zschieschang
  • Dag Andersson
  • Sven Rzepka
Conference paper
Part of the Lecture Notes in Mobility book series (LNMOB)

Abstract

Wide-bandgap semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in electric vehicles due to their improved electrical and thermal properties in comparison to silicon based solutions.

In this paper, a novel SiC based power module will be introduced, which is going to be integrated into a currently developed drive-train system for electric commercial vehicles. Increased requirements with respect to robustness and lifetime are typical for this application field. Therefore, reliability aspects such as lifetime-limiting factors, reliability assessment strategies as well as possible derived optimization measures will be the main focus of the described work.

Keywords

Electric drive-train system power electronics silicon carbide doublesided cooling reliability 

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References

  1. 1.
    Rzepka, S., Otto, A.: COSIVU – Compact, Smart and Reliable Drive Unit for Fully Electric Vehicles. Micromaterials and Nanomaterials (15), 116–121 (2013)Google Scholar
  2. 2.
    Hensler, A., Wingert, D., Herold, C., Lutz, J., Thoben, M.: Thermal impedance spectroscopy of power modules. Microelectronics Reliability (51), 1679–1683 (2011)Google Scholar
  3. 3.
    Otto, A., Vohra, A., Rzepka, S.: Newly Developed Test Bench for Active Power Cycling Tests. Micromaterials and Nanomaterials (15), 132–134 (2013)Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Alexander Otto
    • 1
    Email author
  • Eberhard Kaulfersch
    • 2
  • Klas Brinkfeldt
    • 3
  • Klaus Neumaier
    • 4
  • Olaf Zschieschang
    • 4
  • Dag Andersson
    • 3
  • Sven Rzepka
    • 1
  1. 1.Department Micro Materials CenterFraunhofer Institute for Electronic Nano Systems ENASChemnitzGermany
  2. 2.Berliner Nanotest und Design GmbHBerlinGermany
  3. 3.Swerea IVF ABMölndalSweden
  4. 4.Fairchild Semiconductor GmbH, Technology Development CenterAschheimGermany

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