Abstract
FETs, specifically JFETs and MOSFETs, are active components typically used in the first stages of the IEPE charge and voltage amplifiers. Their parameters, including noise, are key factor for performance of the amplifier and the whole sensor. In most IEPE accelerometers, noise of an amplifier dominates the noise of a PE transducer. Noise of an amplifier is caused by its several noise sources, of which the FET intrinsic noise plays a critical role. This noise creates the fundamental noise limit for any FET amplifier. The FET intrinsic noise is comprised of two noise sources: 1/f noise and thermal noise. This chapter presents the measurement results and comparison of the 1/f noise and thermal noise in different commercial n-channel JFETs and n-channel and p-channel MOSFETs in a frequency range from 0.1 to 100 kHz. The chapter’s content is a continuation of the previous author’s works on experimental investigation of 1/f and thermal noise in FETs [1–3]. In comparison to these works, more FETs of each type are measured, more detailed information about the noise measurement system is presented, and new results are obtained.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Levinzon FA, Vandamme LKJ (2011) Comparison of 1/f noise in JFETs and MOSFETs with several figures of merit, fluctuation and noise letters. World Scientific 10(4):447–465
Levinzon FA (2005) Measurement of low-frequency noise of modern low-noise junction field effect transistors. IEEE Trans Instrum Meas 54(6):2427–2432
Levinzon FA (2000) Noise of JFET amplifier. IEEE Trans Circuits Syst I 47(7):981–985
Van der Ziel A (1970) Noise, sources, characteristics measurement. Prentice-Hall, Englewood Cliffs, NJ
Cobbold RSC (1970) Noise in field-effect transistors, in theory and applications of field-effect transistors, ch. 9. New York, Wiley-Intersience, pp 305–355
Hooge FN (1994) 1/f noise sources. IEEE Trans Electron Devices 41:1926–1935
Hooge FN, Kleinpenning TGM, Vandamme LKJ (1981) Experimental studies on 1/f noise. Rep Prog Phys 44:479–532
Vandamme LKJ, Li X, Rigaud D (1994) 1/f noise in MOS devices mobility or number fluctuations? IEEE Trans Electron Devices 41:1936–1945
(1994) Section 7: N-Channel JFETs. In: Low-power discretes data book. Siliconix Inc., Santa Clara, CA, pp 7-1–7-93
(1996) Section B, JFET data sheets. In: Semiconductor databook, Vol 3(4). InterFET Corporation, Garland, TX, pp B1–B70
(2012) 3N170 3N171, N-channel MOSFET enhancement mode, data sheet. Linear Systems, Fremont, CA. http://www.linearsystems.com/assets/media/file/datasheets/3N170-1.pdf
(1994) 3N163/3N164, P-channel enhancement-mode MOSFET transistors, data sheet. Vishay Intertechnology, Inc., Malvern, PA. http://www.farnell.com/datasheets/69003.pdf
(2012) LSK389, Ultra low noise monolithic dual n-channel JFET, specification sheet. Linear Systems, Fremont, CA. http://www.linearsystems.com/assets/media/file/datasheets/LSK389.pdf
(2013) LSK170, Ultra low noise single n-channel JFET, specification sheet. Linear Systems, Fremont, CA. http://www.linearsystems.com/assets/media/file/datasheets/LSK170.pdf
(2011) VN2222LLG Small signal MOSFET 150 mAmps, 60 Volts, N-channel, data sheet. On Semiconductor, Phoenix, AZ. http://www.onsemi.com/pub_link/Collateral/VN2222LL-D.PDF
(1995) 2N7000/2N7002/NDS7002A N-channel enhancement mode field effect transistor, data sheet. Fairchild Semiconductor, San Jose, CA. http://www.fairchildsemi.com/ds/2N/2N7000.pdf
(2012) TN2404K/TN2404KL/BS107KL N-channel 240 V (D-S) MOSFE, data sheet. Vishay Siliconix, Vishay Intertechnology, Inc., Malvern, PA. http://www.vishay.com/docs/72225/tn2404k.pdf
(2002) BSS84, P-channel enhancement mode field-effect transistor, data sheet. Fairchild Semiconductor, San Jose, CA. http://www.fairchildsemi.com/ds/BS/BSS84.pdf
Vandamme LKJ, Hooge FN (2008) What do we certainly know about 1/f noise in MOSTs? IEEE Trans Electron Devices 55:3070–3085
Vandamme LKJ, Xiaosong L, Rigaud D (1994) 1/f noise in MOS devices mobility or number fluctuations? IEEE Trans Electron Devices 41:1936–1945
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2015 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Levinzon, F. (2015). Comparison of 1/f Noise and Thermal Noise in JFETs and MOSFETs. In: Piezoelectric Accelerometers with Integral Electronics. Springer, Cham. https://doi.org/10.1007/978-3-319-08078-9_5
Download citation
DOI: https://doi.org/10.1007/978-3-319-08078-9_5
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-08077-2
Online ISBN: 978-3-319-08078-9
eBook Packages: EngineeringEngineering (R0)